| 9520500 |
Self heating reduction for analog radio frequency (RF) device |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty, Tenko Yamashita |
2016-12-13 |
| 9502418 |
Semiconductor devices with sidewall spacers of equal thickness |
Kangguo Cheng, Balasubramanian Pranatharthiharan |
2016-11-22 |
| 9496257 |
Removal of semiconductor growth defects |
Linus Jang |
2016-11-15 |
| 9466505 |
Methods of patterning features having differing widths |
Linus Jang, Ryan O. Jung |
2016-10-11 |
| 9461168 |
Channel strain and controlling lateral epitaxial growth of the source and drain in FinFET devices |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2016-10-04 |
| 9449884 |
Semiconductor device with trench epitaxy and contact |
— |
2016-09-20 |
| 9443855 |
Spacer formation on semiconductor device |
Thamarai S. Devarajan, Sanjay C. Mehta, Eric R. Miller |
2016-09-13 |
| 9431486 |
Channel strain and controlling lateral epitaxial growth of the source and drain in FinFET devices |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2016-08-30 |
| 9397006 |
Co-integration of different fin pitches for logic and analog devices |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2016-07-19 |
| 9362362 |
FinFET with dielectric isolated channel |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-06-07 |
| 9330983 |
CMOS NFET and PFET comparable spacer width |
Kangguo Cheng, Injo Ok |
2016-05-03 |
| 9312360 |
FinFET with epitaxial source and drain regions and dielectric isolated channel region |
Kangguo Cheng, Ramachandra Divakaruni, Ali Khakifirooz, Alexander Reznicek |
2016-04-12 |
| 9257531 |
Self-aligned contact structure for replacement metal gate |
Balasubramanian S. Haran, Alexander Reznicek |
2016-02-09 |
