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Replacement metal gate finFET |
Hemanth Jagannathan, Junli Wang, Chun-Chen Yeh, Stefan Schmitz |
2016-12-27 |
| 9484431 |
Pure boron for silicide contact |
Chia-Yu Chen, Zuoguang Liu, Tenko Yamashita |
2016-11-01 |
| 9484256 |
Pure boron for silicide contact |
Chia-Yu Chen, Zuoguang Liu, Tenko Yamashita |
2016-11-01 |
| 9472407 |
Replacement metal gate FinFET |
Hemanth Jagannathan, Junli Wang, Chun-Chen Yeh, Stefan Schmitz |
2016-10-18 |
| 9449812 |
Hydrogen-free silicon-based deposited dielectric films for nano device fabrication |
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| 9443855 |
Spacer formation on semiconductor device |
Thamarai S. Devarajan, Eric R. Miller, Soon-Cheon Seo |
2016-09-13 |
| 9437436 |
Replacement metal gate FinFET |
Hemanth Jagannathan, Junli Wang, Chun-Chen Yeh, Stefan Schmitz |
2016-09-06 |
| 9425292 |
Field effect transistor device spacers |
Xiuyu Cai, Tenko Yamashita |
2016-08-23 |
| 9406767 |
POC process flow for conformal recess fill |
Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie |
2016-08-02 |
| 9397049 |
Gate tie-down enablement with inner spacer |
Su Chen Fan, Andre P. Labonte, Lars Liebmann |
2016-07-19 |
| 9373697 |
Spacer replacement for replacement metal gate semiconductor devices |
Shom Ponoth, Muthumanickam Sankarapandian, Theodorus E. Standaert, Tenko Yamashita |
2016-06-21 |
| 9356121 |
Divot-free planarization dielectric layer for replacement gate |
Hemanth Jagannathan |
2016-05-31 |
| 9318347 |
Wafer backside particle mitigation |
Marc A. Bergendahl, James J. Demarest, Alex Richard Hubbard, Richard C. Johnson, Ryan O. Jung +3 more |
2016-04-19 |
| 9245965 |
Uniform finFET gate height |
Balasubramanian S. Haran, Shom Ponoth, Ravikumar Ramachandran, Stefan Schmitz, Theodorus E. Standaert |
2016-01-26 |
| 9236397 |
FinFET device containing a composite spacer structure |
Judson R. Holt, Jinghong Li, Alexander Reznicek, Dominic J. Schepis |
2016-01-12 |
