Issued Patents 2016
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9496368 | Partial spacer for increasing self aligned contact process margins | Emre Alptekin, Viraj Y. Sardesai, Reinaldo Vega | 2016-11-15 |
| 9496362 | Contact first replacement metal gate | Emre Alptekin, Viraj Y. Sardesai | 2016-11-15 |
| 9496258 | Semiconductor fin isolation by a well trapping fin portion | Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Huiling Shang, Reinaldo Vega | 2016-11-15 |
| 9431399 | Method for forming merged contact for semiconductor device | Emre Alptekin, Balasubramanian Pranatharthiharan, Sivananda K. Kanakasabapathy, Mickey H. Yu | 2016-08-30 |
| 9431395 | Protection of semiconductor-oxide-containing gate dielectric during replacement gate formation | Gregory Costrini, Reinaldo Vega, Richard S. Wise | 2016-08-30 |
| 9397175 | Multi-composition gate dielectric field effect transistors | Emre Alptekin, Unoh Kwon, Wing L. Lai, Zhengwen Li, Vijay Narayanan +1 more | 2016-07-19 |
| 9368593 | Multiple thickness gate dielectrics for replacement gate field effect transistors | Unoh Kwon, Wing L. Lai, Vijay Narayanan, Sean M. Polvino, Shahab Siddiqui | 2016-06-14 |
| 9349649 | Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs | Kevin K. Chan, Yue Ke, Annie Levesque, Dae-Gyu Park, Amanda L. Tessier +1 more | 2016-05-24 |
| 9349650 | Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs | Kevin K. Chan, Yue Ke, Annie Levesque, Dae-Gyu Park, Amanda L. Tessier +1 more | 2016-05-24 |
| 9337200 | Dynamic random access memory cell employing trenches located between lengthwise edges of semiconductor fins | Herbert L. Ho, Reinaldo Vega | 2016-05-10 |
| 9293461 | Replacement metal gate structures for effective work function control | Unoh Kwon, Michael P. Chudzik | 2016-03-22 |
| 9252053 | Self-aligned contact structure | Rosa A. Orozco-Teran, John A. Fitzsimmons, Russell H. Arndt, David L. Rath | 2016-02-02 |
| 9245965 | Uniform finFET gate height | Balasubramanian S. Haran, Sanjay C. Mehta, Shom Ponoth, Stefan Schmitz, Theodorus E. Standaert | 2016-01-26 |
| 9231072 | Multi-composition gate dielectric field effect transistors | Emre Alptekin, Unoh Kwon, Wing L. Lai, Zhengwen Li, Vijay Narayanan +1 more | 2016-01-05 |