| 9502504 |
SOI lateral bipolar transistors having surrounding extrinsic base portions |
Jin Cai, Tak H. Ning, Jeng-Bang Yau |
2016-11-22 |
| 9490352 |
Bipolar transistor with carbon alloyed contacts |
Bahman Hekmatshoartabari, Tak H. Ning |
2016-11-08 |
| 9490332 |
Atomic layer doping and spacer engineering for reduced external resistance in finFETs |
Karthik Balakrishnan, Pouya Hashemi |
2016-11-08 |
| 9443953 |
Sacrificial silicon germanium channel for inversion oxide thickness scaling with mitigated work function roll-off and improved negative bias temperature instability |
Takashi Ando, Eduard A. Cartier, Vijay Narayanan |
2016-09-13 |
| 9437718 |
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown |
Jin Cai, Tak H. Ning, Jeng-Bang Yau, Joonah Yoon |
2016-09-06 |
| 9437717 |
Interface control in a bipolar junction transistor |
Peng Cheng, Qizhi Liu, Ljubo Radic |
2016-09-06 |
| 9425260 |
Application of super lattice films on insulator to lateral bipolar transistors |
Bahman Hekmatshoartabari, Tak H. Ning |
2016-08-23 |
| 9418846 |
Selective dopant junction for a group III-V semiconductor device |
Marinus Hopstaken, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung, Deborah A. Neumayer +3 more |
2016-08-16 |
| 9406529 |
Formation of FinFET junction |
Pouya Hashemi, Ali Khakifirooz, John A. Ott, Alexander Reznicek |
2016-08-02 |
| 9391171 |
Fin field effect transistor including a strained epitaxial semiconductor shell |
Young-Hee Kim, Masaharu Kobayashi, Jinghong Li, Dae-Gyu Park |
2016-07-12 |
| 9356114 |
Lateral heterojunction bipolar transistor with low temperature recessed contacts |
Bahman Hekmatshoartabari, Tak H. Ning, Davood Shahrjerdi |
2016-05-31 |
| 9349832 |
Sacrificial silicon germanium channel for inversion oxide thickness scaling with mitigated work function roll-off and improved negative bias temperature instability |
Takashi Ando, Eduard A. Cartier, Vijay Narayanan |
2016-05-24 |
| 9349649 |
Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs |
Yue Ke, Annie Levesque, Dae-Gyu Park, Ravikumar Ramachandran, Amanda L. Tessier +1 more |
2016-05-24 |
| 9349650 |
Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs |
Yue Ke, Annie Levesque, Dae-Gyu Park, Ravikumar Ramachandran, Amanda L. Tessier +1 more |
2016-05-24 |
| 9318585 |
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown |
Jin Cai, Tak H. Ning, Jeng-Bang Yau, Joonah Yoon |
2016-04-19 |
| 9318318 |
3D atomic layer gate or junction extender |
Pouya Hashemi, Effendi Leobandung, Dae-Gyu Park, Min Yang |
2016-04-19 |
| 9316160 |
Method for operating a thermal power plant |
Hongtao Li, Joerg Oesterheld |
2016-04-19 |
| 9306042 |
Bipolar transistor with carbon alloyed contacts |
Bahman Hekmatshoartabari, Tak H. Ning |
2016-04-05 |
| 9306038 |
Shallow extension junction |
Pouya Hashemi, Effendi Leobandung, Dae-Gyu Park, Min Yang |
2016-04-05 |
| 9293557 |
Low temperature spacer for advanced semiconductor devices |
Alfred Grill, Deborah A. Neumayer, Dae-Gyu Park, Norma E. Sosa, Min Yang |
2016-03-22 |
| 9287136 |
FinFET field-effect transistors with atomic layer doping |
Young-Hee Kim, Isaac Lauer, Ramachandran Muralidhar, Dae-Gyu Park, Xinhui Wang +1 more |
2016-03-15 |
| 9275907 |
3D transistor channel mobility enhancement |
Dae-Gyu Park, Xinhui Wang, Yun-Yu Wang, Min Yang, Qi Zhang |
2016-03-01 |
| 9246113 |
Junction field-effect quantum dot memory switch |
Tze-Chiang Chen, Kailash Gopalakrishnan, Wilfried E. Haensch, Bahman Hekmatshoartabari |
2016-01-26 |
| 9236499 |
Junction field-effect transistor with raised source and drain regions formed by selective epitaxy |
John J. Ellis-Monaghan, David L. Harame, Qizhi Liu, John J. Pekarik |
2016-01-12 |
