| 9530643 |
Selective epitaxy using epitaxy-prevention layers |
Cheng-Wei Cheng, Jeehwan Kim, Devendra K. Sadana |
2016-12-27 |
| 9496263 |
Stacked strained and strain-relaxed hexagonal nanowires |
Takashi Ando, Pouya Hashemi, Alexander Reznicek |
2016-11-15 |
| 9472450 |
Graphene cap for copper interconnect structures |
Griselda Bonilla, Christos D. Dimitrakopoulos, Alfred Grill, James B. Hannon, Qinghuang Lin +3 more |
2016-10-18 |
| 9466672 |
Reduced defect densities in graded buffer layers by tensile strained interlayers |
Kangguo Cheng, Keith E. Fogel, Pouya Hashemi, Alexander Reznicek |
2016-10-11 |
| 9406529 |
Formation of FinFET junction |
Kevin K. Chan, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-08-02 |
| 9368415 |
Non-destructive, wafer scale method to evaluate defect density in heterogeneous epitaxial layers |
Stephen W. Bedell |
2016-06-14 |
| 9324843 |
High germanium content silicon germanium fins |
Karthik Balakrishnan, John Bruley, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-04-26 |
| 9306107 |
Buffer layer for high performing and low light degraded solar cells |
Augustin J. Hong, Marinus Hopstaken, Jeehwan Kim, Devendra K. Sadana |
2016-04-05 |
