| 9484438 |
Method to improve reliability of replacement gate device |
Takashi Ando, Eduard A. Cartier, Kisik Choi |
2016-11-01 |
| 9472643 |
Method to improve reliability of replacement gate device |
Takashi Ando, Eduard A. Cartier, Kisik Choi |
2016-10-18 |
| 9472553 |
High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material |
Takashi Ando, Martin M. Frank, Pranita Kerber |
2016-10-18 |
| 9466692 |
Method to improve reliability of replacement gate device |
Takashi Ando, Eduard A. Cartier, Kisik Choi |
2016-10-11 |
| 9455203 |
Low threshold voltage CMOS device |
Takashi Ando, Changhwan Choi, Kisik Choi |
2016-09-27 |
| 9449887 |
Method of forming replacement gate PFET having TiALCO layer for improved NBTI performance |
Takashi Ando, Balaji Kannan |
2016-09-20 |
| 9443953 |
Sacrificial silicon germanium channel for inversion oxide thickness scaling with mitigated work function roll-off and improved negative bias temperature instability |
Takashi Ando, Eduard A. Cartier, Kevin K. Chan |
2016-09-13 |
| 9397175 |
Multi-composition gate dielectric field effect transistors |
Emre Alptekin, Unoh Kwon, Wing L. Lai, Zhengwen Li, Ravikumar Ramachandran +1 more |
2016-07-19 |
| 9397199 |
Methods of forming multi-Vt III-V TFET devices |
Unoh Kwon, Siddarth A. Krishnan, Jeffrey W. Sleight |
2016-07-19 |
| 9391164 |
Method to improve reliability of replacement gate device |
Takashi Ando, Eduard A. Cartier, Kisik Choi |
2016-07-12 |
| 9368593 |
Multiple thickness gate dielectrics for replacement gate field effect transistors |
Unoh Kwon, Wing L. Lai, Sean M. Polvino, Ravikumar Ramachandran, Shahab Siddiqui |
2016-06-14 |
| 9362282 |
High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material |
Takashi Ando, Martin M. Frank, Pranita Kerber |
2016-06-07 |
| 9349832 |
Sacrificial silicon germanium channel for inversion oxide thickness scaling with mitigated work function roll-off and improved negative bias temperature instability |
Takashi Ando, Eduard A. Cartier, Kevin K. Chan |
2016-05-24 |
| 9299802 |
Method to improve reliability of high-K metal gate stacks |
Takashi Ando, Eduard A. Cartier, Barry P. Linder |
2016-03-29 |
| 9299799 |
Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure |
Catherine A. Dubourdieu, Martin M. Frank |
2016-03-29 |
| 9263276 |
High-k/metal gate transistor with L-shaped gate encapsulation layer |
Renee T. Mo, Wesley C. Natzle, Jeffrey W. Sleight |
2016-02-16 |
| 9263344 |
Low threshold voltage CMOS device |
Takashi Ando, Changhwan Choi, Kisik Choi |
2016-02-16 |
| 9257289 |
Lowering parasitic capacitance of replacement metal gate processes |
Effendi Leobandung |
2016-02-09 |
| 9252229 |
Inversion thickness reduction in high-k gate stacks formed by replacement gate processes |
Takashi Ando |
2016-02-02 |
| 9252018 |
High-k/metal gate transistor with L-shaped gate encapsulation layer |
Renee T. Mo, Wesley C. Natzle, Jeffrey W. Sleight |
2016-02-02 |
| 9236314 |
High-K/metal gate stack using capping layer methods, IC and related transistors |
Michael P. Chudzik, Naim Moumen, Dae-Gyu Park, Vamsi K. Paruchuri |
2016-01-12 |
| 9231072 |
Multi-composition gate dielectric field effect transistors |
Emre Alptekin, Unoh Kwon, Wing L. Lai, Zhengwen Li, Ravikumar Ramachandran +1 more |
2016-01-05 |
