| 9496143 |
Metal gate structure for midgap semiconductor device and method of making same |
Hoon Kim |
2016-11-15 |
$8,353,000 |
| 9484438 |
Method to improve reliability of replacement gate device |
Takashi Ando, Eduard A. Cartier, Vijay Narayanan |
2016-11-01 |
$3,150,000 |
| 9472643 |
Method to improve reliability of replacement gate device |
Takashi Ando, Eduard A. Cartier, Vijay Narayanan |
2016-10-18 |
$1,445,000 |
| 9466692 |
Method to improve reliability of replacement gate device |
Takashi Ando, Eduard A. Cartier, Vijay Narayanan |
2016-10-11 |
$5,326,000 |
| 9455203 |
Low threshold voltage CMOS device |
Takashi Ando, Changhwan Choi, Vijay Narayanan |
2016-09-27 |
$4,099,000 |
| 9431507 |
Replacement gate structure with low-K sidewall spacer for semiconductor devices |
Ruilong Xie |
2016-08-30 |
$3,218,000 |
| 9391164 |
Method to improve reliability of replacement gate device |
Takashi Ando, Eduard A. Cartier, Vijay Narayanan |
2016-07-12 |
$3,552,000 |
| 9362283 |
Gate structures for transistor devices for CMOS applications and products |
Zhendong Hong, Susie Tzeng, Amol Joshi, Ashish Bodke, Divya Pisharoty +6 more |
2016-06-07 |
$2,066,000 |
| 9349823 |
Methods of scaling thickness of a gate dielectric structure, methods of forming an integrated circuit, and integrated circuits |
— |
2016-05-24 |
$1,910,000 |
| 9287130 |
Method for single fin cuts using selective ion implants |
Xiuyu Cai, Ajey Poovannummoottil Jacob, Ruilong Xie, Bruce B. Doris, Kangguo Cheng +7 more |
2016-03-15 |
$907,000 |
| 9263344 |
Low threshold voltage CMOS device |
Takashi Ando, Changhwan Choi, Vijay Narayanan |
2016-02-16 |
$2,821,000 |
| 9257348 |
Methods of forming replacement gate structures for transistors and the resulting devices |
Ruilong Xie, Su Chen Fan, Shom Ponoth |
2016-02-09 |
$571,000 |
| 9245968 |
Field effect transistor and method of fabrication |
Hoon Kim, Chanro Park |
2016-01-26 |
$652,000 |
