| 9508604 |
Methods of forming punch through stop regions on FinFET devices on CMOS-based IC products using doped spacers |
Min Gyu Sung, Hoon Kim, Ruilong Xie |
2016-11-29 |
| 9502308 |
Methods for forming transistor devices with different source/drain contact liners and the resulting devices |
Hoon Kim, Ruilong Xie, Min Gyu Sung |
2016-11-22 |
| 9502286 |
Methods of forming self-aligned contact structures on semiconductor devices and the resulting devices |
Ruilong Xie, Min Gyu Sung, Hoon Kim, Andre P. Labonte |
2016-11-22 |
| 9478661 |
Semiconductor device structures with self-aligned fin structure(s) and fabrication methods thereof |
Ruilong Xie, Hoon Kim, Min Gyu Sung |
2016-10-25 |
| 9478538 |
Methods for forming transistor devices with different threshold voltages and the resulting devices |
Hoon Kim, Ruilong Xie, Min Gyu Sung |
2016-10-25 |
| 9461171 |
Methods of increasing silicide to epi contact areas and the resulting devices |
Ruilong Xie, Hoon Kim, Naim Moumen, William J. Taylor, Jr. |
2016-10-04 |
| 9425106 |
Methods of performing fin cut etch processes for taper FinFET semiconductor devices and the resulting devices |
Ruilong Xie, Min Gyu Sung, Hoon Kim |
2016-08-23 |
| 9425103 |
Methods of using a metal protection layer to form replacement gate structures for semiconductor devices |
Ruilong Xie, Sean Xuan Lin |
2016-08-23 |
| 9391174 |
Method of uniform fin recessing using isotropic etch |
Min Gyu Sung, Ruilong Xie, Hoon Kim |
2016-07-12 |
| 9379017 |
Method of forming a semiconductor structure including a plurality of fins and an alignment/overlay mark |
Min Gyu Sung, Hoon Kim, Ruilong Xie |
2016-06-28 |
| 9362377 |
Low line resistivity and repeatable metal recess using CVD cobalt reflow |
Hoon Kim, Vimal Kamineni, Min Gyu Sung |
2016-06-07 |
| 9362279 |
Contact formation for semiconductor device |
Ruilong Xie, Andy Wei, William J. Taylor, Jr., Ryan Ryoung-Han Kim, Kwan-Yong Lim |
2016-06-07 |
| 9362181 |
Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products |
Ruilong Xie, Min Gyu Sung, Ryan Ryoung-Han Kim, Kwan-Yong Lim |
2016-06-07 |
| 9337101 |
Methods for selectively removing a fin when forming FinFET devices |
Min Gyu Sung, Hoon Kim, Ruilong Xie |
2016-05-10 |
| 9312388 |
Methods of forming epitaxial semiconductor material in trenches located above the source and drain regions of a semiconductor device |
Ruilong Xie, Hoon Kim, Min Gyu Sung |
2016-04-12 |
| 9263446 |
Methods of forming replacement gate structures on transistor devices with a shared gate structure and the resulting products |
Ruilong Xie, Kwan-Yong Lim, Min Gyu Sung |
2016-02-16 |
| 9245968 |
Field effect transistor and method of fabrication |
Hoon Kim, Kisik Choi |
2016-01-26 |
| 9236309 |
Methods of fabricating semiconductor fin structures |
Steven Bentley |
2016-01-12 |
