| 9490317 |
Gate contact structure having gate contact layer |
Andre P. Labonte |
2016-11-08 |
$4,991,000 |
| 9484258 |
Method for producing self-aligned vias |
Wenhui Wang, Lei Sun, Erik Verduijn, Yulu Chen |
2016-11-01 |
$4,589,000 |
| 9478462 |
SAV using selective SAQP/SADP |
Wenhui Wang, Lei Sun, Erik Verduijn, Yulu Chen |
2016-10-25 |
$3,817,000 |
| 9466604 |
Metal segments as landing pads and local interconnects in an IC device |
Youngtag Woo, Myungjun Lee, Jongwook Kye |
2016-10-11 |
$4,519,000 |
| 9460079 |
Method, system and recording medium for providing dictionary function and file distribution system |
Tae Hoon Lee, Jonghwan Kim, Eunjoo Jeon, Jin An JUNG, Taihwa Hong +2 more |
2016-10-04 |
|
| 9449835 |
Methods of forming features having differing pitch spacing and critical dimensions |
Linus Jang |
2016-09-20 |
$5,529,000 |
| 9431264 |
Methods of forming integrated circuits and multiple critical dimension self-aligned double patterning processes |
Linus Jang, Young-joon Moon |
2016-08-30 |
$3,218,000 |
| 9412616 |
Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products |
Ruilong Xie, Kwan-Yong Lim, Min Gyu Sung |
2016-08-09 |
$2,792,000 |
| 9406616 |
Merged source/drain and gate contacts in SRAM bitcell |
Youngtag Woo |
2016-08-02 |
$3,259,000 |
| 9379027 |
Method of utilizing trench silicide in a gate cross-couple construct |
— |
2016-06-28 |
$2,208,000 |
| 9362403 |
Buried fin contact structures on FinFET semiconductor devices |
Ruilong Xie, William J. Taylor, Jr. |
2016-06-07 |
$2,066,000 |
| 9362279 |
Contact formation for semiconductor device |
Ruilong Xie, Andy Wei, William J. Taylor, Jr., Kwan-Yong Lim, Chanro Park |
2016-06-07 |
$2,066,000 |
| 9362181 |
Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products |
Ruilong Xie, Min Gyu Sung, Kwan-Yong Lim, Chanro Park |
2016-06-07 |
$2,066,000 |
| 9299781 |
Semiconductor devices with contact structures and a gate structure positioned in trenches formed in a layer of material |
Ruilong Xie, William J. Taylor, Jr. |
2016-03-29 |
$707,000 |
| 9275889 |
Method and apparatus for high yield contact integration scheme |
Jason R. Cantone, Wenhui Wang |
2016-03-01 |
$579,000 |
