Issued Patents 2016
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9490317 | Gate contact structure having gate contact layer | Andre P. Labonte | 2016-11-08 |
| 9484258 | Method for producing self-aligned vias | Wenhui Wang, Lei Sun, Erik Verduijn, Yulu Chen | 2016-11-01 |
| 9478462 | SAV using selective SAQP/SADP | Wenhui Wang, Lei Sun, Erik Verduijn, Yulu Chen | 2016-10-25 |
| 9466604 | Metal segments as landing pads and local interconnects in an IC device | Youngtag Woo, Myungjun Lee, Jongwook Kye | 2016-10-11 |
| 9460079 | Method, system and recording medium for providing dictionary function and file distribution system | Tae Hoon Lee, Jonghwan Kim, Eunjoo Jeon, Jin An JUNG, Taihwa Hong +2 more | 2016-10-04 |
| 9449835 | Methods of forming features having differing pitch spacing and critical dimensions | Linus Jang | 2016-09-20 |
| 9431264 | Methods of forming integrated circuits and multiple critical dimension self-aligned double patterning processes | Linus Jang, Young-joon Moon | 2016-08-30 |
| 9412616 | Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products | Ruilong Xie, Kwan-Yong Lim, Min Gyu Sung | 2016-08-09 |
| 9406616 | Merged source/drain and gate contacts in SRAM bitcell | Youngtag Woo | 2016-08-02 |
| 9379027 | Method of utilizing trench silicide in a gate cross-couple construct | — | 2016-06-28 |
| 9362403 | Buried fin contact structures on FinFET semiconductor devices | Ruilong Xie, William J. Taylor, Jr. | 2016-06-07 |
| 9362279 | Contact formation for semiconductor device | Ruilong Xie, Andy Wei, William J. Taylor, Jr., Kwan-Yong Lim, Chanro Park | 2016-06-07 |
| 9362181 | Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products | Ruilong Xie, Min Gyu Sung, Kwan-Yong Lim, Chanro Park | 2016-06-07 |
| 9299781 | Semiconductor devices with contact structures and a gate structure positioned in trenches formed in a layer of material | Ruilong Xie, William J. Taylor, Jr. | 2016-03-29 |
| 9275889 | Method and apparatus for high yield contact integration scheme | Jason R. Cantone, Wenhui Wang | 2016-03-01 |