Issued Patents 2016
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9508604 | Methods of forming punch through stop regions on FinFET devices on CMOS-based IC products using doped spacers | Chanro Park, Hoon Kim, Ruilong Xie | 2016-11-29 |
| 9502308 | Methods for forming transistor devices with different source/drain contact liners and the resulting devices | Chanro Park, Hoon Kim, Ruilong Xie | 2016-11-22 |
| 9502286 | Methods of forming self-aligned contact structures on semiconductor devices and the resulting devices | Ruilong Xie, Chanro Park, Hoon Kim, Andre P. Labonte | 2016-11-22 |
| 9478661 | Semiconductor device structures with self-aligned fin structure(s) and fabrication methods thereof | Ruilong Xie, Chanro Park, Hoon Kim | 2016-10-25 |
| 9478538 | Methods for forming transistor devices with different threshold voltages and the resulting devices | Hoon Kim, Ruilong Xie, Chanro Park | 2016-10-25 |
| 9449881 | Methods of forming fins for FinFET semiconductor devices and the resulting devices | Ruilong Xie | 2016-09-20 |
| 9425106 | Methods of performing fin cut etch processes for taper FinFET semiconductor devices and the resulting devices | Ruilong Xie, Chanro Park, Hoon Kim | 2016-08-23 |
| 9419131 | Semiconductor device having vertical channel transistor and method for fabricating the same | Yong-Soo Kim, Kwan-Yong Lim | 2016-08-16 |
| 9412616 | Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products | Ruilong Xie, Kwan-Yong Lim, Ryan Ryoung-Han Kim | 2016-08-09 |
| 9391174 | Method of uniform fin recessing using isotropic etch | Ruilong Xie, Chanro Park, Hoon Kim | 2016-07-12 |
| 9385189 | Fin liner integration under aggressive pitch | Neeraj Tripathi | 2016-07-05 |
| 9379017 | Method of forming a semiconductor structure including a plurality of fins and an alignment/overlay mark | Chanro Park, Hoon Kim, Ruilong Xie | 2016-06-28 |
| 9362377 | Low line resistivity and repeatable metal recess using CVD cobalt reflow | Hoon Kim, Vimal Kamineni, Chanro Park | 2016-06-07 |
| 9362181 | Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products | Ruilong Xie, Ryan Ryoung-Han Kim, Kwan-Yong Lim, Chanro Park | 2016-06-07 |
| 9337101 | Methods for selectively removing a fin when forming FinFET devices | Hoon Kim, Chanro Park, Ruilong Xie | 2016-05-10 |
| 9324799 | FinFET structures having uniform channel size and methods of fabrication | Kwan-Yong Lim, Sukwon Hong | 2016-04-26 |
| 9312183 | Methods for forming FinFETS having a capping layer for reducing punch through leakage | Hoon Kim | 2016-04-12 |
| 9312388 | Methods of forming epitaxial semiconductor material in trenches located above the source and drain regions of a semiconductor device | Ruilong Xie, Hoon Kim, Chanro Park | 2016-04-12 |
| 9312182 | Forming gate and source/drain contact openings by performing a common etch patterning process | Ruilong Xie, William J. Taylor, Jr. | 2016-04-12 |
| 9263446 | Methods of forming replacement gate structures on transistor devices with a shared gate structure and the resulting products | Ruilong Xie, Kwan-Yong Lim, Chanro Park | 2016-02-16 |
| 9236308 | Methods of fabricating fin structures of uniform height | Kwan-Yong Lim, Sukwon Hong | 2016-01-12 |