Issued Patents 2016
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9461171 | Methods of increasing silicide to epi contact areas and the resulting devices | Ruilong Xie, Hoon Kim, Naim Moumen, Chanro Park | 2016-10-04 |
| 9385201 | Buried source-drain contact for integrated circuit transistor devices and method of making same | Qing Liu, Ruilong Xie, Chun-Chen Yeh, Xiuyu Cai | 2016-07-05 |
| 9362279 | Contact formation for semiconductor device | Ruilong Xie, Andy Wei, Ryan Ryoung-Han Kim, Kwan-Yong Lim, Chanro Park | 2016-06-07 |
| 9362403 | Buried fin contact structures on FinFET semiconductor devices | Ruilong Xie, Ryan Ryoung-Han Kim | 2016-06-07 |
| 9330972 | Methods of forming contact structures for semiconductor devices and the resulting devices | Ruilong Xie, Vimal Kamineni | 2016-05-03 |
| 9318552 | Methods of forming conductive contact structures for a semiconductor device with a larger metal silicide contact area and the resulting devices | Ruilong Xie, Ajey Poovannummoottil Jacob | 2016-04-19 |
| 9312182 | Forming gate and source/drain contact openings by performing a common etch patterning process | Ruilong Xie, Min Gyu Sung | 2016-04-12 |
| 9299781 | Semiconductor devices with contact structures and a gate structure positioned in trenches formed in a layer of material | Ruilong Xie, Ryan Ryoung-Han Kim | 2016-03-29 |
| 9263340 | Methods for removing selected fins that are formed for finFET semiconductor devices | Ruilong Xie | 2016-02-16 |
| 9231051 | Methods of forming spacers on FinFETs and other semiconductor devices | Xiuyu Cai, Ruilong Xie | 2016-01-05 |