Issued Patents 2016
Showing 1–25 of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9524908 | Methods of removing portions of fins by preforming a selectively etchable material in the substrate | Yi Qi | 2016-12-20 |
| 9508853 | Channel cladding last process flow for forming a channel region on a FinFET device having a reduced size fin in the channel region | Witold P. Maszara, Jody A. Fronheiser | 2016-11-29 |
| 9496354 | Semiconductor devices with dummy gate structures partially on isolation regions | Ruilong Xie, Xiuyu Cai, Andreas Knorr, Christopher M. Prindle | 2016-11-15 |
| 9484428 | Non-planar exciton transistor (BiSFET) and methods for making | — | 2016-11-01 |
| 9478663 | FinFET device including a uniform silicon alloy fin | Jody A. Fronheiser, Yi Qi, Sylvie Mignot | 2016-10-25 |
| 9466664 | Uniaxially-strained FD-SOI finFET | Pierre Morin, Maud Vinet, Laurent Grenouillet | 2016-10-11 |
| 9455199 | Methods of forming strained and relaxed germanium fins for PMOS and NMOS finFET devices, respectively | — | 2016-09-27 |
| 9455140 | Methods of forming doped epitaxial SiGe material on semiconductor devices | Jody A. Fronheiser, Murat Kerem Akarvardar | 2016-09-27 |
| 9431306 | Methods of forming fin isolation regions on FinFET semiconductor devices using an oxidation-blocking layer of material and by performing a fin-trimming process | Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2016-08-30 |
| 9425315 | FinFET semiconductor device with isolated fins made of alternative channel materials | Murat Kerem Akarvardar | 2016-08-23 |
| 9425289 | Methods of forming alternative channel materials on FinFET semiconductor devices | Murat Kerem Akarvardar | 2016-08-23 |
| 9412822 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Xiuyu Cai, Ruilong Xie, Kangguo Cheng, Ali Khakifirooz, Witold P. Maszara | 2016-08-09 |
| 9406803 | FinFET device including a uniform silicon alloy fin | Jody A. Fronheiser, Murat Kerem Akarvardar, Steven Bentley | 2016-08-02 |
| 9385233 | Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide | Murat Kerem Akarvardar | 2016-07-05 |
| 9373721 | Methods of forming a non-planar ultra-thin body semiconductor device and the resulting devices | Ruilong Xie, Michael Hargrove | 2016-06-21 |
| 9368591 | Transistors comprising doped region-gap-doped region structures and methods of fabrication | Steven Bentley, Chia-Yu Chen, Tenko Yamashita | 2016-06-14 |
| 9368578 | Methods of forming substrates comprised of different semiconductor materials and the resulting device | Bartlomiej Jan Pawlak, Steven Bentley | 2016-06-14 |
| 9362405 | Channel cladding last process flow for forming a channel region on a FinFET device | Witold P. Maszara, Jody A. Fronheiser | 2016-06-07 |
| 9362277 | FinFET with multilayer fins for multi-value logic (MVL) applications and method of forming | Min-hwa Chi, Abhijeet Paul | 2016-06-07 |
| 9349840 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Xiuyu Cai, Ruilong Xie, Witold P. Maszara, Kangguo Cheng, Ali Khakifirooz | 2016-05-24 |
| 9349658 | Methods of forming fin isolation regions on finFET semiconductor devices using an oxidation-blocking layer of material | Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2016-05-24 |
| 9349730 | Fin transformation process and isolation structures facilitating different Fin isolation schemes | Kangguo Cheng, Bruce B. Doris, Nicolas Loubet, Prasanna Khare, Ramachandra Divakaruni | 2016-05-24 |
| 9343300 | Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel region | Michael Hargrove, Jody A. Fronheiser, Murat Kerem Akarvardar | 2016-05-17 |
| 9324790 | Self-aligned dual-height isolation for bulk FinFET | Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Bruce B. Doris, Jody A. Fronheiser +2 more | 2016-04-26 |
| 9318552 | Methods of forming conductive contact structures for a semiconductor device with a larger metal silicide contact area and the resulting devices | Ruilong Xie, William J. Taylor, Jr. | 2016-04-19 |