AJ

Ajey Poovannummoottil Jacob

Globalfoundries: 39 patents #7 of 2,145Top 1%
IBM: 7 patents #605 of 10,295Top 6%
SS Stmicroelectronics Sa: 5 patents #13 of 162Top 9%
RE Renesas Electronics: 2 patents #126 of 914Top 15%
CEA: 2 patents #97 of 991Top 10%
University of California: 1 patents #239 of 1,590Top 20%
IN Intel: 1 patents #2,105 of 5,207Top 45%
📍 Los Angeles, CA: #1 of 1,225 inventorsTop 1%
🗺 California: #71 of 57,791 inventorsTop 1%
Overall (2016): #287 of 481,213Top 1%
40
Patents 2016

Issued Patents 2016

Showing 26–40 of 40 patents

Patent #TitleCo-InventorsDate
9318342 Methods of removing fins for finfet semiconductor devices Ruilong Xie, Andreas Knorr, Michael Hargrove 2016-04-19
9312387 Methods of forming FinFET devices with alternative channel materials Murat Kerem Akarvardar, Michael Hargrove, Ruilong Xie 2016-04-12
9305846 Device isolation in FinFET CMOS Murat Kerem Akarvardar, Steven Bentley, Toshiharu Nagumo, Kangguo Cheng, Bruce B. Doris +1 more 2016-04-05
9293587 Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (FinFET) device Murat Kerem Akarvardar 2016-03-22
9293324 Methods of forming semiconductor devices including an electrically-decoupled fin Steven Bentley 2016-03-22
9287130 Method for single fin cuts using selective ion implants Xiuyu Cai, Ruilong Xie, Bruce B. Doris, Kangguo Cheng, Jason R. Cantone +7 more 2016-03-15
9269628 Methods of removing portions of at least one fin structure so as to form isolation regions when forming FinFET semiconductor devices 2016-02-23
9263580 Methods of forming isolated channel regions for a FinFET semiconductor device and the resulting device Nicolas Loubet 2016-02-16
9263587 Fin device with blocking layer in channel region Min-hwa Chi 2016-02-16
9252208 Uniaxially-strained FD-SOI finFET Pierre Morin, Maud Vinet, Laurent Grenouillet 2016-02-02
9245694 Solid-state supercapacitor Bruce S. Dunn, Chi On Chui, Daniel Membreno, Leland Smith 2016-01-26
9245980 Methods of forming substantially defect-free, fully-strained silicon-germanium fins for a FinFET semiconductor device Murat Kerem Akarvardar, Jody A. Fronheiser 2016-01-26
9240342 Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process Murat Kerem Akarvardar, Jody A. Fronheiser, Witold P. Maszara 2016-01-19
9236479 Methods of forming replacement gate structures and fins on FinFET devices and the resulting devices Ruilong Xie 2016-01-12
9236258 Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices Ruilong Xie, Xiuyu Cai, Andy Wei, Qi Zhang, Michael Hargrove 2016-01-12