| 9508853 |
Channel cladding last process flow for forming a channel region on a FinFET device having a reduced size fin in the channel region |
Ajey Poovannummoottil Jacob, Jody A. Fronheiser |
2016-11-29 |
| 9460924 |
Semiconductor device having structure with fractional dimension of the minimum dimension of a lithography system |
Qi Xiang |
2016-10-04 |
| 9412822 |
Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device |
Xiuyu Cai, Ruilong Xie, Kangguo Cheng, Ali Khakifirooz, Ajey Poovannummoottil Jacob |
2016-08-09 |
| 9362405 |
Channel cladding last process flow for forming a channel region on a FinFET device |
Ajey Poovannummoottil Jacob, Jody A. Fronheiser |
2016-06-07 |
| 9349840 |
Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device |
Xiuyu Cai, Ruilong Xie, Ajey Poovannummoottil Jacob, Kangguo Cheng, Ali Khakifirooz |
2016-05-24 |
| 9240342 |
Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process |
Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Jody A. Fronheiser |
2016-01-19 |
