Issued Patents 2016
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9530869 | Methods of forming embedded source/drain regions on finFET devices | Jody A. Fronheiser, Steven Bentley | 2016-12-27 |
| 9515088 | High density and modular CMOS logic based on 3D stacked, independent-gate, junctionless FinFETs | — | 2016-12-06 |
| 9508848 | Methods of forming strained channel regions on FinFET devices by performing a heating process on a heat-expandable material | Jody A. Fronheiser | 2016-11-29 |
| 9502507 | Methods of forming strained channel regions on FinFET devices | Jody A. Fronheiser | 2016-11-22 |
| 9455140 | Methods of forming doped epitaxial SiGe material on semiconductor devices | Ajey Poovannummoottil Jacob, Jody A. Fronheiser | 2016-09-27 |
| 9425289 | Methods of forming alternative channel materials on FinFET semiconductor devices | Ajey Poovannummoottil Jacob | 2016-08-23 |
| 9425315 | FinFET semiconductor device with isolated fins made of alternative channel materials | Ajey Poovannummoottil Jacob | 2016-08-23 |
| 9412839 | Methods of forming replacement gate structures on FinFET devices and the resulting devices | — | 2016-08-09 |
| 9406803 | FinFET device including a uniform silicon alloy fin | Ajey Poovannummoottil Jacob, Jody A. Fronheiser, Steven Bentley | 2016-08-02 |
| 9385233 | Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide | Ajey Poovannummoottil Jacob | 2016-07-05 |
| 9362361 | Methods of forming elastically relaxed SiGe virtual substrates on bulk silicon | — | 2016-06-07 |
| 9343300 | Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel region | Ajey Poovannummoottil Jacob, Michael Hargrove, Jody A. Fronheiser | 2016-05-17 |
| 9337022 | Virtual relaxed substrate on edge-relaxed composite semiconductor pillars | Jody A. Fronheiser, Bruce B. Doris | 2016-05-10 |
| 9324790 | Self-aligned dual-height isolation for bulk FinFET | Steven Bentley, Kangguo Cheng, Bruce B. Doris, Jody A. Fronheiser, Ajey Poovannummoottil Jacob +2 more | 2016-04-26 |
| 9324618 | Methods of forming replacement fins for a FinFET device | Jody A. Fronheiser, Bruce B. Doris | 2016-04-26 |
| 9324617 | Methods of forming elastically relaxed SiGe virtual substrates on bulk silicon | — | 2016-04-26 |
| 9312387 | Methods of forming FinFET devices with alternative channel materials | Ajey Poovannummoottil Jacob, Michael Hargrove, Ruilong Xie | 2016-04-12 |
| 9305846 | Device isolation in FinFET CMOS | Ajey Poovannummoottil Jacob, Steven Bentley, Toshiharu Nagumo, Kangguo Cheng, Bruce B. Doris +1 more | 2016-04-05 |
| 9293587 | Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (FinFET) device | Ajey Poovannummoottil Jacob | 2016-03-22 |
| 9287130 | Method for single fin cuts using selective ion implants | Xiuyu Cai, Ajey Poovannummoottil Jacob, Ruilong Xie, Bruce B. Doris, Kangguo Cheng +7 more | 2016-03-15 |
| 9252245 | Spacer-last replacement metal gate flow and device | Rama Kambhampati | 2016-02-02 |
| 9245980 | Methods of forming substantially defect-free, fully-strained silicon-germanium fins for a FinFET semiconductor device | Jody A. Fronheiser, Ajey Poovannummoottil Jacob | 2016-01-26 |
| 9240342 | Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process | Ajey Poovannummoottil Jacob, Jody A. Fronheiser, Witold P. Maszara | 2016-01-19 |