Issued Patents 2016
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9530869 | Methods of forming embedded source/drain regions on finFET devices | Murat Kerem Akarvardar, Steven Bentley | 2016-12-27 |
| 9508853 | Channel cladding last process flow for forming a channel region on a FinFET device having a reduced size fin in the channel region | Ajey Poovannummoottil Jacob, Witold P. Maszara | 2016-11-29 |
| 9508848 | Methods of forming strained channel regions on FinFET devices by performing a heating process on a heat-expandable material | Murat Kerem Akarvardar | 2016-11-29 |
| 9502507 | Methods of forming strained channel regions on FinFET devices | Murat Kerem Akarvardar | 2016-11-22 |
| 9478663 | FinFET device including a uniform silicon alloy fin | Ajey Poovannummoottil Jacob, Yi Qi, Sylvie Mignot | 2016-10-25 |
| 9455140 | Methods of forming doped epitaxial SiGe material on semiconductor devices | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar | 2016-09-27 |
| 9406803 | FinFET device including a uniform silicon alloy fin | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven Bentley | 2016-08-02 |
| 9362405 | Channel cladding last process flow for forming a channel region on a FinFET device | Ajey Poovannummoottil Jacob, Witold P. Maszara | 2016-06-07 |
| 9343300 | Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel region | Ajey Poovannummoottil Jacob, Michael Hargrove, Murat Kerem Akarvardar | 2016-05-17 |
| 9337022 | Virtual relaxed substrate on edge-relaxed composite semiconductor pillars | Murat Kerem Akarvardar, Bruce B. Doris | 2016-05-10 |
| 9324790 | Self-aligned dual-height isolation for bulk FinFET | Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Bruce B. Doris, Ajey Poovannummoottil Jacob +2 more | 2016-04-26 |
| 9324618 | Methods of forming replacement fins for a FinFET device | Murat Kerem Akarvardar, Bruce B. Doris | 2016-04-26 |
| 9245980 | Methods of forming substantially defect-free, fully-strained silicon-germanium fins for a FinFET semiconductor device | Murat Kerem Akarvardar, Ajey Poovannummoottil Jacob | 2016-01-26 |
| 9240342 | Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Witold P. Maszara | 2016-01-19 |
| 9236452 | Raised source/drain EPI with suppressed lateral EPI overgrowth | Kwan-Yong Lim, Christopher M. Prindle | 2016-01-12 |