| 9520328 |
Type III-V and type IV semiconductor device formation |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-12-13 |
$6,265,000 |
| 9520397 |
Abrupt source/drain junction formation using a diffusion facilitation layer |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-12-13 |
$6,265,000 |
| 9515171 |
Radiation tolerant device structure |
Ali Khakifirooz, Darsen D. Lu, Philip J. Oldiges |
2016-12-06 |
$2,582,000 |
| 9515185 |
Silicon germanium-on-insulator FinFET |
Qing Liu, Hong He |
2016-12-06 |
$9,098,000 |
| 9515138 |
Structure and method to minimize junction capacitance in nano sheets |
Terence B. Hook, Xin Miao |
2016-12-06 |
$2,582,000 |
| 9515141 |
FinFET device with channel strain |
Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie |
2016-12-06 |
$2,582,000 |
| 9515173 |
Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-12-06 |
$2,582,000 |
| 9508851 |
Formation of bulk SiGe fin with dielectric isolation by anodization |
Thomas N. Adam, Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-11-29 |
$4,543,000 |
| 9508741 |
CMOS structure on SSOI wafer |
Hong He, Ali Khakifirooz, Junli Wang |
2016-11-29 |
$4,543,000 |
| 9508829 |
Nanosheet MOSFET with full-height air-gap spacer |
Kangguo Cheng, Michael A. Guillorn, Xin Miao |
2016-11-29 |
$4,543,000 |
| 9502411 |
Strained finFET device fabrication |
Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg |
2016-11-22 |
$3,414,000 |
| 9502243 |
Multi-orientation SOI substrates for co-integration of different conductivity type semiconductor devices |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-11-22 |
$3,414,000 |
| 9502292 |
Dual shallow trench isolation liner for preventing electrical shorts |
Shom Ponoth, Prasanna Khare, Qing Liu, Nicolas Loubet, Maud Vinet |
2016-11-22 |
$3,414,000 |
| 9502540 |
Uniform height tall fins with varying silicon germanium concentrations |
Stephen W. Bedell, Keith E. Fogel, Alexander Reznicek |
2016-11-22 |
$3,414,000 |
| 9496281 |
Dual isolation on SSOI wafer |
Hong He, Ali Khakifirooz, Junli Wang |
2016-11-15 |
$2,170,000 |
| 9496186 |
Uniform height tall fins with varying silicon germanium concentrations |
Stephen W. Bedell, Keith E. Fogel, Alexander Reznicek |
2016-11-15 |
$2,170,000 |
| 9496343 |
Secondary use of aspect ratio trapping holes as eDRAM structure |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-11-15 |
$2,170,000 |
| 9490335 |
Extra gate device for nanosheet |
Terence B. Hook, Junli Wang |
2016-11-08 |
$9,888,000 |
| 9490161 |
Channel SiGe devices with multiple threshold voltages on hybrid oriented substrates, and methods of manufacturing same |
Lisa F. Edge, Pouya Hashemi, Alexander Reznicek |
2016-11-08 |
$9,888,000 |
| 9484359 |
MOSFET with work function adjusted metal backgate |
Kangguo Cheng, Pranita Kerber, Ali Khakifirooz |
2016-11-01 |
$4,589,000 |
| 9478658 |
Device and method for fabricating thin semiconductor channel and buried strain memorization layer |
Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi |
2016-10-25 |
$3,817,000 |
| 9472616 |
Undercut insulating regions for silicon-on-insulator device |
Kangguo Cheng, Balasubramanian Pranatharthiharan, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita |
2016-10-18 |
$1,445,000 |
| 9472621 |
CMOS structures with selective tensile strained NFET fins and relaxed PFET fins |
Hong He, Ali Khakifirooz, Joshua M. Rubin |
2016-10-18 |
$1,445,000 |
| 9466567 |
Nanowire compatible E-fuse |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-10-11 |
$4,519,000 |
| 9461169 |
Device and method for fabricating thin semiconductor channel and buried strain memorization layer |
Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi |
2016-10-04 |
$4,373,000 |
