Issued Patents 2016
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9515141 | FinFET device with channel strain | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Fee Li Lie | 2016-12-06 |
| 9502411 | Strained finFET device fabrication | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Fee Li Lie, Stuart A. Sieg | 2016-11-22 |
| 9496371 | Channel protection during fin fabrication | Russell H. Arndt, Hong He, Fee Li Lie, Muthumanickam Sankarapandian | 2016-11-15 |
| 9431514 | FinFET device having a high germanium content fin structure and method of making same | Qing Liu, Bruce B. Doris | 2016-08-30 |
| 9362280 | Semiconductor devices with different dielectric thicknesses | Mark D. Hall, Srikanth B. Samavedam | 2016-06-07 |
| 9331148 | FinFET device with channel strain | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Fee Li Lie | 2016-05-03 |
| RE45955 | Dual high-K oxides with SiGe channel | Tien Ying Luo, Daniel Tekleab | 2016-03-29 |
| 9287264 | Epitaxially grown silicon germanium channel FinFET with silicon underlayer | Kangguo Cheng, Eric C. Harley, Judson R. Holt, Yue Ke, Derrick Liu +4 more | 2016-03-15 |