| 9515141 |
FinFET device with channel strain |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Fee Li Lie |
2016-12-06 |
| 9502411 |
Strained finFET device fabrication |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Fee Li Lie, Stuart A. Sieg |
2016-11-22 |
| 9496371 |
Channel protection during fin fabrication |
Russell H. Arndt, Hong He, Fee Li Lie, Muthumanickam Sankarapandian |
2016-11-15 |
| 9431514 |
FinFET device having a high germanium content fin structure and method of making same |
Qing Liu, Bruce B. Doris |
2016-08-30 |
| 9362280 |
Semiconductor devices with different dielectric thicknesses |
Mark D. Hall, Srikanth B. Samavedam |
2016-06-07 |
| 9331148 |
FinFET device with channel strain |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Fee Li Lie |
2016-05-03 |
| RE45955 |
Dual high-K oxides with SiGe channel |
Tien Ying Luo, Daniel Tekleab |
2016-03-29 |
| 9287264 |
Epitaxially grown silicon germanium channel FinFET with silicon underlayer |
Kangguo Cheng, Eric C. Harley, Judson R. Holt, Yue Ke, Derrick Liu +4 more |
2016-03-15 |
