| 9466616 |
Uniform junction formation in FinFETs |
Judson R. Holt, Yue Ke, Timothy J. McArdle, Shogo Mochizuki, Alexander Reznicek |
2016-10-11 |
| 9412843 |
Method for embedded diamond-shaped stress element |
Judson R. Holt, Jin Z. Wallner, Thomas A. Wallner |
2016-08-09 |
| 9390884 |
Method of inspecting a semiconductor substrate |
Oliver D. Patterson, Kevin T. Wu |
2016-07-12 |
| 9318608 |
Uniform junction formation in FinFETs |
Judson R. Holt, Yue Ke, Timothy J. McArdle, Shogo Mochizuki, Alexander Reznicek |
2016-04-19 |
| 9312364 |
finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
Judson R. Holt, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo |
2016-04-12 |
| 9287264 |
Epitaxially grown silicon germanium channel FinFET with silicon underlayer |
Kangguo Cheng, Judson R. Holt, Gauri Karve, Yue Ke, Derrick Liu +4 more |
2016-03-15 |
| 9246003 |
FINFET structures with fins recessed beneath the gate |
Kangguo Cheng, Yue Ke, Ali Khakifirooz, Alexander Reznicek |
2016-01-26 |
| 9236477 |
Graphene transistor with a sublithographic channel width |
Jack O. Chu, Christos D. Dimitrakopoulos, Judson R. Holt, Timothy J. McArdle, Matthew W. Stoker |
2016-01-12 |
