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DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods |
Nicolas L. Breil, Ricardo A. Donaton, Dong-Hun Kang, Herbert L. Ho |
2016-11-15 |
| 9373501 |
Hydroxyl group termination for nucleation of a dielectric metallic oxide |
Takashi Ando, Michael P. Chudzik, Min Dai, Martin M. Frank, David F. Hilscher +3 more |
2016-06-21 |
| 9373524 |
Die level chemical mechanical polishing |
Rajasekhar Venigalla |
2016-06-21 |
| 9318336 |
Non-volatile memory structure employing high-k gate dielectric and metal gate |
Nicolas L. Breil, Michael P. Chudzik, Siddarth A. Krishnan, Unoh Kwon |
2016-04-19 |
| 9312364 |
finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
Eric C. Harley, Judson R. Holt, Yue Ke, Keith H. Tabakman, Henry K. Utomo |
2016-04-12 |
| 9299766 |
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods |
Nicolas L. Breil, Ricardo A. Donaton, Dong-Hun Kang, Herbert L. Ho |
2016-03-29 |
| 9269607 |
Wafer stress control with backside patterning |
Edward R. Engbrecht, Donghun Kang, Oh-Jung Kwon, Karen A. Nummy |
2016-02-23 |
