| 9515164 |
Methods and structure to form high K metal gate stack with single work-function metal |
Takashi Ando, Balaji Kannan, Unoh Kwon, Shahab Siddiqui |
2016-12-06 |
| 9502307 |
Forming a semiconductor structure for reduced negative bias temperature instability |
Ruqiang Bao |
2016-11-22 |
| 9484427 |
Field effect transistors having multiple effective work functions |
Takashi Ando, Min Dai, Balaji Kannan, Unoh Kwon |
2016-11-01 |
| 9472419 |
Method of patterning dopant films in high-K dielectrics in a soft mask integration scheme |
Takashi Ando, Hemanth Jagannathan, Balaji Kannan, Unoh Kwon, Rekha Rajaram |
2016-10-18 |
| 9412658 |
Constrained nanosecond laser anneal of metal interconnect structures |
Oleg Gluschenkov, Joyeeta Nag, Andrew H. Simon, Shishir Ray |
2016-08-09 |
| 9397199 |
Methods of forming multi-Vt III-V TFET devices |
Unoh Kwon, Vijay Narayanan, Jeffrey W. Sleight |
2016-07-19 |
| 9397177 |
Variable length multi-channel replacement metal gate including silicon hard mask |
Michael P. Chudzik, Unoh Kwon |
2016-07-19 |
| 9373690 |
Variable length multi-channel replacement metal gate including silicon hard mask |
Michael P. Chudzik, Unoh Kwon |
2016-06-21 |
| 9330938 |
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme |
Takashi Ando, Hemanth Jagannathan, Balaji Kannan, Unoh Kwon, Rekha Rajaram |
2016-05-03 |
| 9318336 |
Non-volatile memory structure employing high-k gate dielectric and metal gate |
Nicolas L. Breil, Michael P. Chudzik, Rishikesh Krishnan, Unoh Kwon |
2016-04-19 |