| 9524986 |
Trapping dislocations in high-mobility fins below isolation layer |
Ramachandra Divakaruni, Judson R. Holt, Arvind Kumar, Unoh Kwon |
2016-12-20 |
| 9478425 |
Fabrication of higher-k dielectrics |
Min Dai, Dominic J. Schepis, Shahab Siddiqui |
2016-10-25 |
| 9437496 |
Merged source drain epitaxy |
Brian J. Greene, Edward P. Maciejewski, Kevin McStay, Shreesh Narasimha, Chengwen Pei +1 more |
2016-09-06 |
| 9431289 |
Method and structure to reduce FET threshold voltage shift due to oxygen diffusion |
Christopher V. Baiocco, Deleep R. Nair, Jay M. Shah |
2016-08-30 |
| 9397177 |
Variable length multi-channel replacement metal gate including silicon hard mask |
Siddarth A. Krishnan, Unoh Kwon |
2016-07-19 |
| 9373690 |
Variable length multi-channel replacement metal gate including silicon hard mask |
Siddarth A. Krishnan, Unoh Kwon |
2016-06-21 |
| 9373501 |
Hydroxyl group termination for nucleation of a dielectric metallic oxide |
Takashi Ando, Min Dai, Martin M. Frank, David F. Hilscher, Rishikesh Krishnan +3 more |
2016-06-21 |
| 9318336 |
Non-volatile memory structure employing high-k gate dielectric and metal gate |
Nicolas L. Breil, Rishikesh Krishnan, Siddarth A. Krishnan, Unoh Kwon |
2016-04-19 |
| 9293461 |
Replacement metal gate structures for effective work function control |
Unoh Kwon, Ravikumar Ramachandran |
2016-03-22 |
| 9257519 |
Semiconductor device including graded gate stack, related method and design structure |
Min Dai, Jinping Liu, Joseph F. Shepard, Jr., Keith Kwong Hon Wong |
2016-02-09 |
| 9252232 |
Multi-plasma nitridation process for a gate dielectric |
Barry P. Linder, Shahab Siddiqui |
2016-02-02 |
| 9236314 |
High-K/metal gate stack using capping layer methods, IC and related transistors |
Naim Moumen, Vijay Narayanan, Dae-Gyu Park, Vamsi K. Paruchuri |
2016-01-12 |
