Issued Patents 2016
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9530701 | Method of forming semiconductor fins on SOI substrate | Kangguo Cheng, Joseph Ervin, Juntao Li, Geng Wang | 2016-12-27 |
| 9490223 | Structure to prevent deep trench moat charging and moat isolation fails | Kangguo Cheng, Joseph Ervin, Juntao Li, Geng Wang | 2016-11-08 |
| 9484269 | Structure and method to control bottom corner threshold in an SOI device | Joseph Ervin, Jeffrey B. Johnson, Kevin McStay, Paul C. Parries, Geng Wang +1 more | 2016-11-01 |
| 9478600 | Method of forming substrate contact for semiconductor on insulator (SOI) substrate | Geng Wang, Roger A. Booth, Jr., Kangguo Cheng, Joseph Ervin, Ravi M. Todi | 2016-10-25 |
| 9461042 | Sublithographic width finFET employing solid phase epitaxy | Kangguo Cheng, Joseph Ervin, Juntao Li, Ravi M. Todi, Geng Wang | 2016-10-04 |
| 9437496 | Merged source drain epitaxy | Michael P. Chudzik, Brian J. Greene, Edward P. Maciejewski, Kevin McStay, Shreesh Narasimha +1 more | 2016-09-06 |
| 9431340 | Wiring structure for trench fuse component with methods of fabrication | Toshiaki Kirihata, Edward P. Maciejewski, Subramanian S. Iyer, Deepal Wehella-Gamage | 2016-08-30 |
| 9431339 | Wiring structure for trench fuse component with methods of fabrication | Toshiaki Kirihata, Edward P. Maciejewski, Subramanian S. Iyer, Deepal Wehella-Gamage | 2016-08-30 |
| 9425309 | Method for forming metal semiconductor alloys in contact holes and trenches | Christian Lavoie, Zhengwen Li, Ahmet S. Ozcan, Filippos Papadatos, Jian-Shen Yu | 2016-08-23 |
| 9406569 | Semiconductor device having diffusion barrier to reduce back channel leakage | Gregory G. Freeman, Kam-Leung Lee, Geng Wang, Yanli Zhang | 2016-08-02 |
| 9397152 | Multilayer MIM capacitor | Kangguo Cheng, Joseph Ervin, Ravi M. Todi, Geng Wang | 2016-07-19 |
| 9391204 | Asymmetric FET | Kangguo Cheng, Joseph Ervin, Juntao Li, Geng Wang | 2016-07-12 |
| 9391030 | On-chip semiconductor device having enhanced variability | Wai-Kin Li, Ping-Chuan Wang | 2016-07-12 |
| 9379177 | Deep trench capacitor | Kangguo Cheng, Joseph Ervin, Ravi M. Todi, Geng Wang | 2016-06-28 |
| 9343320 | Pattern factor dependency alleviation for eDRAM and logic devices with disposable fill to ease deep trench integration with fins | Kangguo Cheng, Joseph Ervin, Juntao Li, Geng Wang | 2016-05-17 |
| 9337289 | Replacement gate MOSFET with a high performance gate electrode | Zhengwen Li, Dechao Guo, Randolph F. Knarr, Gan Wang, Yanfeng Wang +3 more | 2016-05-10 |
| 9293520 | Method of forming substrate contact for semiconductor on insulator (SOI) substrate | Geng Wang, Roger A. Booth, Jr., Kangguo Cheng, Joseph Ervin, Ravi M. Todi | 2016-03-22 |
| 9287272 | Metal trench capacitor and improved isolation and methods of manufacture | Roger A. Booth, Jr., Kangguo Cheng, Joseph Ervin, Ravi M. Todi, Geng Wang | 2016-03-15 |
| 9281390 | Structure and method for forming programmable high-K/metal gate memory device | Roger A. Booth, Jr., Kangguo Cheng, Chandrasekara Kothandaraman | 2016-03-08 |
| 9252794 | Frequency calibration with real-time resistor trimming | Kai D. Feng, David R. Hanson, Ping-Chuan Wang | 2016-02-02 |
| 9240354 | Semiconductor device having diffusion barrier to reduce back channel leakage | Gregory G. Freeman, Kam-Leung Lee, Geng Wang, Yanli Zhang | 2016-01-19 |
| 9240482 | Asymmetric stressor DRAM | Ravi K. Dasaka, Shreesh Narasimha, Ahmed Nayaz Noemaun, Karen A. Nummy, Katsunori Onishi +3 more | 2016-01-19 |
| 9240406 | Precision trench capacitor | Kai D. Feng, Dan Moy, Robert R. Robison, Pinping Sun, Richard A. Wachnik +1 more | 2016-01-19 |
| 9228994 | Nanochannel electrode devices | Kangguo Cheng, Joseph Ervin, Juntao Li, Geng Wang | 2016-01-05 |