Issued Patents 2016
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9530701 | Method of forming semiconductor fins on SOI substrate | Kangguo Cheng, Joseph Ervin, Chengwen Pei, Geng Wang | 2016-12-27 |
| 9520357 | Anti-fuse structure and method for manufacturing the same | Hong He, Junli Wang, Chih-Chao Yang | 2016-12-13 |
| 9490223 | Structure to prevent deep trench moat charging and moat isolation fails | Kangguo Cheng, Joseph Ervin, Chengwen Pei, Geng Wang | 2016-11-08 |
| 9484267 | Stacked nanowire devices | Kangguo Cheng, Ramachandra Divakaruni | 2016-11-01 |
| 9484201 | Epitaxial silicon germanium fin formation using sacrificial silicon fin templates | Hong He, Junli Wang, Chih-Chao Yang | 2016-11-01 |
| 9461042 | Sublithographic width finFET employing solid phase epitaxy | Kangguo Cheng, Joseph Ervin, Chengwen Pei, Ravi M. Todi, Geng Wang | 2016-10-04 |
| 9455314 | Y-FET with self-aligned punch-through-stop (PTS) doping | Kangguo Cheng, Ramachandra Divakaruni | 2016-09-27 |
| 9443977 | FinFET with reduced source and drain resistance | Kangguo Cheng, Xin Miao, Junli Wang | 2016-09-13 |
| 9431521 | Stress memorization technique for strain coupling enhancement in bulk finFET device | Kangguo Cheng, Chun-Chen Yeh | 2016-08-30 |
| 9431425 | Directly forming SiGe fins on oxide | Kangguo Cheng, Hong He, Junli Wang | 2016-08-30 |
| 9425196 | Multiple threshold voltage FinFETs | Kangguo Cheng, Ramachandra Divakaruni, Fee Li Lie | 2016-08-23 |
| 9397215 | FinFET with reduced source and drain resistance | Kangguo Cheng, Xin Miao, Junli Wang | 2016-07-19 |
| 9391204 | Asymmetric FET | Kangguo Cheng, Joseph Ervin, Chengwen Pei, Geng Wang | 2016-07-12 |
| 9379221 | Bottom-up metal gate formation on replacement metal gate finFET devices | Hong He, Junli Wang, Chih-Chao Yang | 2016-06-28 |
| 9379110 | Method of fabrication of ETSOI CMOS device by sidewall image transfer (SIT) | Kangguo Cheng | 2016-06-28 |
| 9343320 | Pattern factor dependency alleviation for eDRAM and logic devices with disposable fill to ease deep trench integration with fins | Kangguo Cheng, Joseph Ervin, Chengwen Pei, Geng Wang | 2016-05-17 |
| 9276013 | Integrated formation of Si and SiGe fins | Bruce B. Doris, Hong He, Junli Wang, Chih-Chao Yang | 2016-03-01 |
| 9228994 | Nanochannel electrode devices | Kangguo Cheng, Joseph Ervin, Chengwen Pei, Geng Wang | 2016-01-05 |