| 9515138 |
Structure and method to minimize junction capacitance in nano sheets |
Bruce B. Doris, Terence B. Hook |
2016-12-06 |
| 9508829 |
Nanosheet MOSFET with full-height air-gap spacer |
Kangguo Cheng, Bruce B. Doris, Michael A. Guillorn |
2016-11-29 |
| 9484306 |
MOSFET with asymmetric self-aligned contact |
Kangguo Cheng, Ruilong Xie, Tenko Yamashita |
2016-11-01 |
| 9466570 |
MOSFET with asymmetric self-aligned contact |
Kangguo Cheng, Ruilong Xie, Tenko Yamashita |
2016-10-11 |
| 9443977 |
FinFET with reduced source and drain resistance |
Kangguo Cheng, Juntao Li, Junli Wang |
2016-09-13 |
| 9437501 |
Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) |
Kangguo Cheng, Ruilong Xie, Tenko Yamashita |
2016-09-06 |
| 9397215 |
FinFET with reduced source and drain resistance |
Kangguo Cheng, Juntao Li, Junli Wang |
2016-07-19 |
| 9362355 |
Nanosheet MOSFET with full-height air-gap spacer |
Kangguo Cheng, Bruce B. Doris, Michael A. Guillorn |
2016-06-07 |
