| 9530659 |
Structure for preventing buried oxide gouging during planar and FinFET Processing on SOI |
Kern Rim |
2016-12-27 |
$3,909,000 |
| 9530890 |
Parasitic capacitance reduction |
Balasubramanian Pranatharthiharan |
2016-12-27 |
$3,909,000 |
| 9530698 |
Method and structure for forming FinFET CMOS with dual doped STI regions |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2016-12-27 |
$3,909,000 |
| 9530651 |
Replacement metal gate finFET |
Hemanth Jagannathan, Sanjay C. Mehta, Chun-Chen Yeh, Stefan Schmitz |
2016-12-27 |
$3,909,000 |
| 9520357 |
Anti-fuse structure and method for manufacturing the same |
Hong He, Juntao Li, Chih-Chao Yang |
2016-12-13 |
$6,265,000 |
| 9520392 |
Semiconductor device including finFET and fin varactor |
Kangguo Cheng, Ruilong Xie, Tenko Yamashita |
2016-12-13 |
$6,265,000 |
| 9515070 |
Replacement metal gate |
David V. Horak, Effendi Leobandung, Stefan Schmitz |
2016-12-06 |
$2,582,000 |
| 9508741 |
CMOS structure on SSOI wafer |
Bruce B. Doris, Hong He, Ali Khakifirooz |
2016-11-29 |
$4,543,000 |
| 9508825 |
Method and structure for forming gate contact above active area with trench silicide |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2016-11-29 |
$4,543,000 |
| 9508818 |
Method and structure for forming gate contact above active area with trench silicide |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2016-11-29 |
$4,543,000 |
| 9496281 |
Dual isolation on SSOI wafer |
Bruce B. Doris, Hong He, Ali Khakifirooz |
2016-11-15 |
$2,170,000 |
| 9490253 |
Gate planarity for finFET using dummy polish stop |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2016-11-08 |
$9,888,000 |
| 9490335 |
Extra gate device for nanosheet |
Bruce B. Doris, Terence B. Hook |
2016-11-08 |
$9,888,000 |
| 9490252 |
MIM capacitor formation in RMG module |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2016-11-08 |
$9,888,000 |
| 9484201 |
Epitaxial silicon germanium fin formation using sacrificial silicon fin templates |
Hong He, Juntao Li, Chih-Chao Yang |
2016-11-01 |
$3,150,000 |
| 9484264 |
Field effect transistor contacts |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2016-11-01 |
$3,150,000 |
| 9472407 |
Replacement metal gate FinFET |
Hemanth Jagannathan, Sanjay C. Mehta, Chun-Chen Yeh, Stefan Schmitz |
2016-10-18 |
$1,445,000 |
| 9472670 |
Field effect transistor device spacers |
Rama Kambhampati, Ruilong Xie, Tenko Yamashita |
2016-10-18 |
$1,445,000 |
| 9455274 |
Replacement fin process in SSOI wafer |
Bruce B. Doris, Hong He, Ali Khakifirooz |
2016-09-27 |
$4,099,000 |
| 9443977 |
FinFET with reduced source and drain resistance |
Kangguo Cheng, Juntao Li, Xin Miao |
2016-09-13 |
$4,023,000 |
| 9437436 |
Replacement metal gate FinFET |
Hemanth Jagannathan, Sanjay C. Mehta, Chun-Chen Yeh, Stefan Schmitz |
2016-09-06 |
$4,975,000 |
| 9431425 |
Directly forming SiGe fins on oxide |
Kangguo Cheng, Hong He, Juntao Li |
2016-08-30 |
$3,867,000 |
| 9418900 |
Silicon germanium and silicon fins on oxide from bulk wafer |
Hong He, Nicolas Loubet, James Kuss |
2016-08-16 |
$3,753,000 |
| 9406746 |
Work function metal fill for replacement gate fin field effect transistor process |
Hong He, Yongan Xu, Yunpeng Yin |
2016-08-02 |
$5,615,000 |
| 9401372 |
Dual isolation on SSOI wafer |
Bruce B. Doris, Hong He, Ali Khakifirooz |
2016-07-26 |
$5,666,000 |
