| 9530698 |
Method and structure for forming FinFET CMOS with dual doped STI regions |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2016-12-27 |
$3,909,000 |
| 9508825 |
Method and structure for forming gate contact above active area with trench silicide |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2016-11-29 |
$4,543,000 |
| 9508818 |
Method and structure for forming gate contact above active area with trench silicide |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2016-11-29 |
$4,543,000 |
| 9508587 |
Formation of isolation surrounding well implantation |
Kangguo Cheng, Shom Ponoth, Tenko Yamashita |
2016-11-29 |
$4,543,000 |
| 9490252 |
MIM capacitor formation in RMG module |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2016-11-08 |
$9,888,000 |
| 9490253 |
Gate planarity for finFET using dummy polish stop |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2016-11-08 |
$9,888,000 |
| 9484264 |
Field effect transistor contacts |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2016-11-01 |
$3,150,000 |
| 9478549 |
FinFET with dielectric isolation by silicon-on-nothing and method of fabrication |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2016-10-25 |
$3,817,000 |
| 9472616 |
Undercut insulating regions for silicon-on-insulator device |
Kangguo Cheng, Bruce B. Doris, Balasubramanian Pranatharthiharan, Shom Ponoth, Tenko Yamashita |
2016-10-18 |
$1,445,000 |
| 9449874 |
Self-forming barrier for subtractive copper |
Vamsi K. Paruchuri |
2016-09-20 |
$4,565,000 |
| 9425184 |
Electrostatic discharge devices and methods of manufacture |
Huiming Bu, Junjun Li, Tenko Yamashita |
2016-08-23 |
$3,302,000 |
| 9418902 |
Forming isolated fins from a substrate |
Kangguo Cheng, Shom Ponoth, Balasubramanian Pranatharthiharan, Tenko Yamashita |
2016-08-16 |
$4,818,000 |
| 9406548 |
Formation of isolation surrounding well implantation |
Kangguo Cheng, Shom Ponoth, Tenko Yamashita |
2016-08-02 |
$5,615,000 |
| 9406665 |
Integrated passive devices for finFET technologies |
Thomas N. Adam, Kangguo Cheng, Balasubramanian Pranatharthi Haran, Shom Ponoth, Tenko Yamashita |
2016-08-02 |
$5,615,000 |
| 9406570 |
FinFET device |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Tenko Yamashita |
2016-08-02 |
$3,259,000 |
| 9379057 |
Method and structure to reduce the electric field in semiconductor wiring interconnects |
Elbert E. Huang, Takeshi Nogami, Raghuveer R. Patlolla, Christopher J. Penny |
2016-06-28 |
$5,648,000 |
| 9373697 |
Spacer replacement for replacement metal gate semiconductor devices |
Sanjay C. Mehta, Shom Ponoth, Muthumanickam Sankarapandian, Tenko Yamashita |
2016-06-21 |
$2,461,000 |
| 9373618 |
Integrated FinFET capacitor |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2016-06-21 |
$3,815,000 |
| 9368343 |
Reduced external resistance finFET device |
Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan, Tenko Yamashita |
2016-06-14 |
$6,457,000 |
| 9349838 |
Semiconductor structure with deep trench thermal conduction |
Kangguo Cheng, Balasubramanian Pranatharthi Haran, Junjun Li, Shom Ponoth, Tenko Yamashita |
2016-05-24 |
$3,942,000 |
| 9337254 |
Integrated FinFET capacitor |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2016-05-10 |
$4,731,000 |
| 9331177 |
Semiconductor structure with deep trench thermal conduction |
Kangguo Cheng, Balasubramanian Pranatharthi Haran, Junjun Li, Shom Ponoth, Tenko Yamashita |
2016-05-03 |
$3,695,000 |
| 9312143 |
Formation of isolation surrounding well implantation |
Kangguo Cheng, Shom Ponoth, Tenko Yamashita |
2016-04-12 |
$2,843,000 |
| 9293375 |
Selectively grown self-aligned fins for deep isolation integration |
Kevin S. Petrarca, Stuart A. Sieg |
2016-03-22 |
$2,974,000 |
| 9281303 |
Electrostatic discharge devices and methods of manufacture |
Huiming Bu, Junjun Li, Tenko Yamashita |
2016-03-08 |
$4,405,000 |
