| 9461149 |
Nanowire structure with selected stack removed for reduced gate resistance and method of fabricating same |
Hongmei Li, Xiaoping Liang, Kai Zhao |
2016-10-04 |
$4,373,000 |
| 9453878 |
Characterization of interface resistance in a multi-layer conductive structure |
John B. Campi, Jr., Robert J. Gauthier, Jr., Souvick Mitra |
2016-09-27 |
$3,712,000 |
| 9425185 |
Self-healing electrostatic discharge power clamp |
Robert J. Gauthier, Jr., Tom C. Lee, You Li, Souvick Mitra |
2016-08-23 |
$3,675,000 |
| 9425184 |
Electrostatic discharge devices and methods of manufacture |
Huiming Bu, Theodorus E. Standaert, Tenko Yamashita |
2016-08-23 |
$3,302,000 |
| 9413169 |
Electrostatic discharge protection circuit with a fail-safe mechanism |
James P. Di Sarro, Robert J. Gauthier, Jr., Tom C. Lee, Souvick Mitra, Christopher S. Putnam |
2016-08-09 |
$2,792,000 |
| 9397086 |
Passive devices for FinFET integrated circuit technologies |
William F. Clark, Jr., Robert J. Gauthier, Jr. |
2016-07-19 |
$4,161,000 |
| 9361322 |
Unidirectional lookalike campaigns in a messaging platform |
Chinmoy Dutta, Vibhor Rastogi, Wanchen Lu, Sandeep Pandey, Utkarsh Srivastava |
2016-06-07 |
$121,286,000 |
| 9349732 |
High voltage lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) having a deep fully depleted drain drift region |
John B. Campi, Jr., Robert J. Gauthier, Jr., Rahul Mishra, Souvick Mitra, Mujahid Muhammad |
2016-05-24 |
$1,910,000 |
| 9349838 |
Semiconductor structure with deep trench thermal conduction |
Kangguo Cheng, Balasubramanian Pranatharthi Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita |
2016-05-24 |
$3,942,000 |
| 9331177 |
Semiconductor structure with deep trench thermal conduction |
Kangguo Cheng, Balasubramanian Pranatharthi Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita |
2016-05-03 |
$3,695,000 |
| 9318479 |
Electrostatic discharge (ESD) silicon controlled rectifier (SCR) with lateral gated section |
Xin Zhang, Xiaofeng Fan |
2016-04-19 |
$45,541,000 |
| 9287178 |
Multi-gate field effect transistor (FET) including isolated fin body |
Hongmei Li |
2016-03-15 |
$907,000 |
| 9281303 |
Electrostatic discharge devices and methods of manufacture |
Huiming Bu, Theodorus E. Standaert, Tenko Yamashita |
2016-03-08 |
$4,405,000 |
| 9263402 |
Self-protected metal-oxide-semiconductor field-effect transistor |
James P. Di Sarro, Robert J. Gauthier, Jr. |
2016-02-16 |
$417,000 |
| 9252242 |
Semiconductor structure with deep trench thermal conduction |
Theodorus E. Standaert, Kangguo Cheng, Balasubramanian Pranatharthi Haran, Shom Ponoth, Tenko Yamashita |
2016-02-02 |
$1,325,000 |
| 9240471 |
SCR with fin body regions for ESD protection |
James P. Di Sarro, Robert J. Gauthier, Jr., Tom C. Lee, Souvick Mitra, Christopher S. Putnam |
2016-01-19 |
$1,034,000 |
| 9236398 |
Passive devices for FinFET integrated circuit technologies |
William F. Clark, Jr., Robert J. Gauthier, Jr., Terence B. Hook, Theodorus E. Standaert, Thomas A. Wallner |
2016-01-12 |
$510,000 |
