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Home › High voltage lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) having a deep fully depleted drain drift region

High voltage lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) having a deep fully depleted drain drift region

US Patent 9349732 · Granted May 24, 2016

Estimated economic value: $1,910,000 ⓘ

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