| 9515163 |
Methods of forming FinFET semiconductor devices with self-aligned contact elements using a replacement gate process and the resulting devices |
Ruilong Xie, Balasubramanian Pranatharthiharan |
2016-12-06 |
$17,587,000 |
| 9508587 |
Formation of isolation surrounding well implantation |
Kangguo Cheng, Theodorus E. Standaert, Tenko Yamashita |
2016-11-29 |
$4,543,000 |
| 9502292 |
Dual shallow trench isolation liner for preventing electrical shorts |
Bruce B. Doris, Prasanna Khare, Qing Liu, Nicolas Loubet, Maud Vinet |
2016-11-22 |
$3,414,000 |
| 9484254 |
Size-filtered multimetal structures |
David V. Horak, Charles W. Koburger, III, Chih-Chao Yang |
2016-11-01 |
$3,150,000 |
| 9478549 |
FinFET with dielectric isolation by silicon-on-nothing and method of fabrication |
Kangguo Cheng, Balasubramanian S. Haran, Theodorus E. Standaert, Tenko Yamashita |
2016-10-25 |
$3,817,000 |
| 9472616 |
Undercut insulating regions for silicon-on-insulator device |
Kangguo Cheng, Bruce B. Doris, Balasubramanian Pranatharthiharan, Theodorus E. Standaert, Tenko Yamashita |
2016-10-18 |
$1,445,000 |
| 9437504 |
Method for the formation of fin structures for FinFET devices |
Nicolas Loubet, Prasanna Khare, Qing Liu, Balasubramanian Pranatharthiharan |
2016-09-06 |
$3,374,000 |
| 9418902 |
Forming isolated fins from a substrate |
Kangguo Cheng, Balasubramanian Pranatharthiharan, Theodorus E. Standaert, Tenko Yamashita |
2016-08-16 |
$4,818,000 |
| 9406570 |
FinFET device |
Kangguo Cheng, Balasubramanian S. Haran, Theodorus E. Standaert, Tenko Yamashita |
2016-08-02 |
$3,259,000 |
| 9406665 |
Integrated passive devices for finFET technologies |
Thomas N. Adam, Kangguo Cheng, Balasubramanian Pranatharthi Haran, Theodorus E. Standaert, Tenko Yamashita |
2016-08-02 |
$5,615,000 |
| 9406548 |
Formation of isolation surrounding well implantation |
Kangguo Cheng, Theodorus E. Standaert, Tenko Yamashita |
2016-08-02 |
$5,615,000 |
| 9379198 |
Integrated circuit structure having selectively formed metal cap |
Chih-Chao Yang, David V. Horak, Charles W. Koburger, III |
2016-06-28 |
$2,208,000 |
| 9379236 |
LDMOS device and structure for bulk FinFET technology |
Akira Ito |
2016-06-28 |
|
| 9379212 |
Extended-drain transistor using inner spacer |
Qintao Zhang, Akira Ito |
2016-06-28 |
|
| 9379135 |
FinFET semiconductor device having increased gate height control |
Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan |
2016-06-28 |
$2,208,000 |
| 9373697 |
Spacer replacement for replacement metal gate semiconductor devices |
Sanjay C. Mehta, Muthumanickam Sankarapandian, Theodorus E. Standaert, Tenko Yamashita |
2016-06-21 |
$2,461,000 |
| 9368343 |
Reduced external resistance finFET device |
Kangguo Cheng, Raghavasimhan Sreenivasan, Theodorus E. Standaert, Tenko Yamashita |
2016-06-14 |
$6,457,000 |
| 9349838 |
Semiconductor structure with deep trench thermal conduction |
Kangguo Cheng, Balasubramanian Pranatharthi Haran, Junjun Li, Theodorus E. Standaert, Tenko Yamashita |
2016-05-24 |
$3,942,000 |
| 9349598 |
Gate contact with vertical isolation from source-drain |
David V. Horak, Balasubramanian Pranatharthiharan, Ruilong Xie |
2016-05-24 |
$3,942,000 |
| 9337188 |
Metal-insulator-metal capacitor structure |
Changyok Park, Guang-Jye Shiau, Akira Ito |
2016-05-10 |
|
| 9334572 |
Interconnect structure and method of making same |
Ya Ou, Terry A. Spooner |
2016-05-10 |
$1,020,000 |
| 9337079 |
Prevention of contact to substrate shorts |
Nicolas Loubet, Qing Liu |
2016-05-10 |
$2,872,000 |
| 9332628 |
Microelectronic structure including air gap |
Daniel C. Edelstein, David V. Horak, Elbert E. Huang, Satyanarayana V. Nitta, Takeshi Nogami +1 more |
2016-05-03 |
$2,239,000 |
| 9331177 |
Semiconductor structure with deep trench thermal conduction |
Kangguo Cheng, Balasubramanian Pranatharthi Haran, Junjun Li, Theodorus E. Standaert, Tenko Yamashita |
2016-05-03 |
$3,695,000 |
| 9312389 |
FinFET with undoped body bulk |
Hemant Deshpande |
2016-04-12 |
|
