{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Extended-drain transistor using inner spacer", "item": "https://www.patentleaderboard.com/patent/9379212"}]}
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Extended-drain transistor using inner spacer

US Patent 9379212 · Granted Jun 28, 2016

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