{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Gate contact with vertical isolation from source-drain", "item": "https://www.patentleaderboard.com/patent/9349598"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gate contact with vertical isolation from source-drain

Gate contact with vertical isolation from source-drain

US Patent 9349598 · Granted May 24, 2016

Estimated economic value: $3,942,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integratead wet clean for bevel treatments2025
TSV and backside power distribution structure2025
Wraparound contact with reduced distance to channel2025
Nanowire source/drain formation for nanosheet device2025
Local enlarged via-to-backside power rail2025
Skip-level TSV with hybrid dielectric scheme for backside power delivery2025
Dual structured buried rail2025
Method and structure of forming independent contact for staggered CFET2025
Strain generation and anchoring in gate-all-around field effect transistors2025
Buried power rail with robust connection to a wrap around contact2025
Formation of trench silicide source or drain contacts without gate damage2025
Isolation rail between backside power rails2025