| 9530843 |
FinFET having an epitaxially grown semiconductor on the fin in the channel region |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Davood Shahrjerdi |
2016-12-27 |
| 9508851 |
Formation of bulk SiGe fin with dielectric isolation by anodization |
Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-11-29 |
| 9496282 |
Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan |
2016-11-15 |
| 9472576 |
Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan |
2016-10-18 |
| 9437679 |
Semi-conductor device with epitaxial source/drain facetting provided at the gate edge |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek |
2016-09-06 |
| 9406545 |
Bulk semiconductor fins with self-aligned shallow trench isolation structures |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-08-02 |
| 9406665 |
Integrated passive devices for finFET technologies |
Kangguo Cheng, Balasubramanian Pranatharthi Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita |
2016-08-02 |
| 9401373 |
Multi-fin finFETs with merged-fin source/drains and replacement gates |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-07-26 |
| 9385231 |
Device structure with increased contact area and reduced gate capacitance |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-07-05 |
| 9373637 |
Epitaxial semiconductor resistor with semiconductor structures on same substrate |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-06-21 |
| 9362310 |
Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same |
Kangguo Cheng, Bruce B. Doris, Hong He, Ali Khakifirooz, Alexander Reznicek |
2016-06-07 |
| 9362309 |
FinFET and method of fabrication |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-06-07 |
| 9330908 |
Semiconductor structure with aspect ratio trapping capabilities |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-05-03 |
| 9312273 |
Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan |
2016-04-12 |
| 9281198 |
Method of fabricating a semiconductor device including embedded crystalline back-gate bias planes |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan |
2016-03-08 |
| 9257536 |
FinFET with crystalline insulator |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan |
2016-02-09 |
| 9236463 |
Compressive strained III-V complementary metal oxide semiconductor (CMOS) device |
Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-01-12 |
