| 9502350 |
Interconnect scaling method including forming dielectric layer over subtractively etched first conductive layer and forming second conductive material on dielectric layer |
Griselda Bonilla, Samuel S. Choi, Ronald G. Filippi, Naftali E. Lustig, Andrew H. Simon |
2016-11-22 |
| 9472477 |
Electromigration test structure for Cu barrier integrity and blech effect evaluations |
Griselda Bonilla, Chao-Kun Hu, Baozhen Li, Paul S. McLaughlin |
2016-10-18 |
| 9431292 |
Alternate dual damascene method for forming interconnects |
Griselda Bonilla, Samuel S. Choi, Ronald G. Filippi, Naftali E. Lustig, Andrew H. Simon |
2016-08-30 |
| 9379057 |
Method and structure to reduce the electric field in semiconductor wiring interconnects |
Takeshi Nogami, Raghuveer R. Patlolla, Christopher J. Penny, Theodorus E. Standaert |
2016-06-28 |
| 9349687 |
Advanced manganese/manganese nitride cap/etch mask for air gap formation scheme in nanocopper low-K interconnect |
Stephen M. Gates, Joe Lee, Son V. Nguyen, Brown C. Peethala, Christopher J. Penny +1 more |
2016-05-24 |
| 9332628 |
Microelectronic structure including air gap |
Daniel C. Edelstein, David V. Horak, Satyanarayana V. Nitta, Takeshi Nogami, Shom Ponoth +1 more |
2016-05-03 |
| 9324650 |
Interconnect structures with fully aligned vias |
Daniel C. Edelstein, Nicholas C. M. Fuller, Satyanarayana V. Nitta, David L. Rath |
2016-04-26 |
| 9305836 |
Air gap semiconductor structure with selective cap bilayer |
Stephen M. Gates, Dimitri Kioussis, Christopher J. Penny, Deepika Priyadarshini |
2016-04-05 |
