| 9530651 |
Replacement metal gate finFET |
Hemanth Jagannathan, Sanjay C. Mehta, Junli Wang, Stefan Schmitz |
2016-12-27 |
$3,909,000 |
| 9525048 |
Symmetrical extension junction formation with low-k spacer and dual epitaxial process in finFET device |
Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita |
2016-12-20 |
$6,917,000 |
| 9515180 |
Vertical slit transistor with optimized AC performance |
Qing Liu, Xiuyu Cai, Ruilong Xie |
2016-12-06 |
$9,098,000 |
| 9508713 |
Densely spaced fins for semiconductor fin field effect transistors |
Hong He, Chiahsun Tseng, Yunpeng Yin |
2016-11-29 |
$4,543,000 |
| 9502518 |
Multi-channel gate-all-around FET |
Qing Liu, Ruilong Xie, Xiuyu Cai |
2016-11-22 |
$5,410,000 |
| 9502302 |
Process for integrated circuit fabrication including a uniform depth tungsten recess technique |
Qing Liu, Ruilong Xie |
2016-11-22 |
$5,410,000 |
| 9502523 |
Nanowire semiconductor device including lateral-etch barrier region |
Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita |
2016-11-22 |
$3,414,000 |
| 9496185 |
Dual channel finFET with relaxed pFET region |
Xiuyu Cai, Qing Liu, Ruilong Xie |
2016-11-15 |
$2,170,000 |
| 9484440 |
Methods for forming FinFETs with non-merged epitaxial fin extensions |
Hong He, Shogo Mochizuki, Chiahsun Tseng, Yunpeng Yin |
2016-11-01 |
$3,150,000 |
| 9484262 |
Stressed channel bulk fin field effect transistor |
Veeraraghavan S. Basker, Akira Hokazono, Hiroshi Itokawa, Tenko Yamashita |
2016-11-01 |
$3,150,000 |
| 9484402 |
Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion |
Ming Cai, Dechao Guo, Liyang Song |
2016-11-01 |
$4,589,000 |
| 9472407 |
Replacement metal gate FinFET |
Hemanth Jagannathan, Sanjay C. Mehta, Junli Wang, Stefan Schmitz |
2016-10-18 |
$1,445,000 |
| 9466722 |
Large area contacts for small transistors |
Qing Liu, Ruilong Xie, Xiuyu Cai |
2016-10-11 |
$3,580,000 |
| 9460969 |
Macro to monitor n-p bump |
Xiuyu Cai, Qing Liu, Ruilong Xie |
2016-10-04 |
$3,433,000 |
| 9455317 |
Nanowire semiconductor device including lateral-etch barrier region |
Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita |
2016-09-27 |
$4,099,000 |
| 9443775 |
Lithography process monitoring of local interconnect continuity |
Hyun-Jin Cho, Tenko Yamashita, Hui Zang |
2016-09-13 |
$3,651,000 |
| 9437499 |
Semiconductor device including merged-unmerged work function metal and variable fin pitch |
Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita |
2016-09-06 |
$4,975,000 |
| 9437436 |
Replacement metal gate FinFET |
Hemanth Jagannathan, Sanjay C. Mehta, Junli Wang, Stefan Schmitz |
2016-09-06 |
$4,975,000 |
| 9431521 |
Stress memorization technique for strain coupling enhancement in bulk finFET device |
Kangguo Cheng, Juntao Li |
2016-08-30 |
$3,867,000 |
| 9431540 |
Method for making a semiconductor device with sidewall spacers for confining epitaxial growth |
Qing Liu, Ruilong Xie, Xiuyu Cai |
2016-08-30 |
$2,633,000 |
| 9412643 |
Shallow trench isolation for end fin variation control |
Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita |
2016-08-09 |
$4,722,000 |
| 9412820 |
Semiconductor device with thinned channel region and related methods |
Qing Liu, Tenko Yamashita, Veeraraghavan S. Basker |
2016-08-09 |
$3,059,000 |
| 9412641 |
FinFET having controlled dielectric region height |
Dechao Guo, Zuoguang Liu, Tenko Yamashita |
2016-08-09 |
$4,722,000 |
| 9406751 |
Method for making strained semiconductor device and related methods |
Qing Liu, Xiuyu Cai, Ruilong Xie |
2016-08-02 |
$3,849,000 |
| 9396957 |
Non-lithographic line pattern formation |
Chiahsun Tseng, David V. Horak, Yunpeng Yin |
2016-07-19 |
$4,161,000 |
