Issued Patents 2016
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9496341 | Silicon germanium fin | Kangguo Cheng, Judson R. Holt | 2016-11-15 |
| 9484440 | Methods for forming FinFETs with non-merged epitaxial fin extensions | Hong He, Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2016-11-01 |
| 9478642 | Semiconductor junction formation | Pouya Hashemi, Alexander Reznicek, Dominic J. Schepis | 2016-10-25 |
| 9466602 | Embedded dynamic random access memory field effect transistor device | Veeraraghavan S. Basker, Alexander Reznicek, Dominic J. Schepis | 2016-10-11 |
| 9466616 | Uniform junction formation in FinFETs | Eric C. Harley, Judson R. Holt, Yue Ke, Timothy J. McArdle, Alexander Reznicek | 2016-10-11 |
| 9461052 | Embedded dynamic random access memory field effect transistor device | Veeraraghavan S. Basker, Alexander Reznicek, Dominic J. Schepis | 2016-10-04 |
| 9461146 | Overhang hardmask to prevent parasitic epitaxial nodules at gate end during source drain epitaxy | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-10-04 |
| 9449921 | Voidless contact metal structures | Veeraraghavan S. Basker, Nicolas L. Breil, Oleg Gluschenkov, Alexander Reznicek | 2016-09-20 |
| 9397197 | Forming wrap-around silicide contact on finFET | Dechao Guo, Hemanth Jagannathan, Zuoguang Liu | 2016-07-19 |
| 9390976 | Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction | Dechao Guo, Andreas Scholze, Chun-Chen Yeh | 2016-07-12 |
| 9378952 | Tall relaxed high percentage silicon germanium fins on insulator | Veeraraghavan S. Basker, Oleg Gluschenkov, Alexander Reznicek | 2016-06-28 |
| 9337335 | Structure and method to form localized strain relaxed SiGe buffer layer | Alexander Reznicek | 2016-05-10 |
| 9318608 | Uniform junction formation in FinFETs | Eric C. Harley, Judson R. Holt, Yue Ke, Timothy J. McArdle, Alexander Reznicek | 2016-04-19 |
| 9318581 | Forming wrap-around silicide contact on finFET | Dechao Guo, Hemanth Jagannathan, Zuoguang Liu | 2016-04-19 |
| 9305781 | Structure and method to form localized strain relaxed SiGe buffer layer | Alexander Reznicek | 2016-04-05 |
| 9287264 | Epitaxially grown silicon germanium channel FinFET with silicon underlayer | Kangguo Cheng, Eric C. Harley, Judson R. Holt, Gauri Karve, Yue Ke +4 more | 2016-03-15 |
| 9263554 | Localized fin width scaling using a hydrogen anneal | Veeraraghavan S. Basker, Tenko Yamashita, Chun-Chen Yeh | 2016-02-16 |