| 9525027 |
Lateral bipolar junction transistor having graded SiGe base |
Pouya Hashemi, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek |
2016-12-20 |
$17,295,000 |
| 9514995 |
Implant-free punch through doping layer formation for bulk FinFET structures |
Keith E. Fogel, Alexander Reznicek, Devendra K. Sadana |
2016-12-06 |
$17,587,000 |
| 9478642 |
Semiconductor junction formation |
Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek |
2016-10-25 |
$3,817,000 |
| 9478425 |
Fabrication of higher-k dielectrics |
Michael P. Chudzik, Min Dai, Shahab Siddiqui |
2016-10-25 |
$7,053,000 |
| 9472460 |
Uniform depth fin trench formation |
Alexander Reznicek, Kangguo Cheng, Ali Khakifirooz, Pouya Hashemi |
2016-10-18 |
$3,531,000 |
| 9472470 |
Methods of forming FinFET with wide unmerged source drain EPI |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-10-18 |
$3,531,000 |
| 9466602 |
Embedded dynamic random access memory field effect transistor device |
Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek |
2016-10-11 |
$5,326,000 |
| 9461052 |
Embedded dynamic random access memory field effect transistor device |
Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek |
2016-10-04 |
$3,433,000 |
| 9455141 |
Silicon-germanium fin of height above critical thickness |
Kanggou Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-09-27 |
$3,712,000 |
| 9450079 |
FinFET having highly doped source and drain regions |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-09-20 |
$4,565,000 |
| 9443873 |
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step |
Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek |
2016-09-13 |
$4,023,000 |
| 9391198 |
Strained semiconductor trampoline |
Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek |
2016-07-12 |
$2,207,000 |
| 9390925 |
Silicon—germanium (SiGe) fin formation |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-07-12 |
$2,207,000 |
| 9385023 |
Method and structure to make fins with different fin heights and no topography |
Kangguo Cheng, Joel P. de Souza, Ali Khakifirooz, Alexander Reznicek |
2016-07-05 |
$2,704,000 |
| 9368512 |
Double diamond shaped unmerged epitaxy for tall fins in tight pitch |
Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty |
2016-06-14 |
$6,457,000 |
| 9368492 |
Forming fins of different materials on the same substrate |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-06-14 |
$2,204,000 |
| 9343550 |
Silicon-on-nothing FinFETs |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-05-17 |
$1,734,000 |
| 9305883 |
Locally raised epitaxy for improved contact by local silicon capping during trench silicide processings |
Sebastian Naczas, Vamsi K. Paruchuri, Alexander Reznicek |
2016-04-05 |
$1,295,000 |
| 9236397 |
FinFET device containing a composite spacer structure |
Judson R. Holt, Jinghong Li, Sanjay C. Mehta, Alexander Reznicek |
2016-01-12 |
$510,000 |
