Issued Patents 2016
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9530699 | Semiconductor device including gate channel having adjusted threshold voltage | Pranita Kerber, Alexander Reznicek | 2016-12-27 |
| 9505611 | Integration of electromechanical and CMOS devices in front-end-of-line using replacement metal gate process flow | Fei Liu, Keith Kwong Hon Wong | 2016-11-29 |
| 9502420 | Structure and method for highly strained germanium channel fins for high mobility pFINFETs | Stephen W. Bedell, Lisa F. Edge, Pranita Kerber, Alexander Reznicek | 2016-11-22 |
| 9502408 | FinFET device including fins having a smaller thickness in a channel region, and a method of manufacturing same | Pranita Kerber, Alexander Reznicek | 2016-11-22 |
| 9443873 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Alexander Reznicek, Dominic J. Schepis | 2016-09-13 |
| 9443963 | SiGe FinFET with improved junction doping control | Pranita Kerber, Alexander Reznicek | 2016-09-13 |
| 9412865 | Reduced resistance short-channel InGaAs planar MOSFET | Pranita Kerber, Alexander Reznicek | 2016-08-09 |
| 9391198 | Strained semiconductor trampoline | Pranita Kerber, Alexander Reznicek, Dominic J. Schepis | 2016-07-12 |
| 9391173 | FinFET device with vertical silicide on recessed source/drain epitaxy regions | Keith E. Fogel, Pranita Kerber, Alexander Reznicek | 2016-07-12 |
| 9379219 | SiGe finFET with improved junction doping control | Pranita Kerber, Alexander Reznicek | 2016-06-28 |
| 9276118 | FinFET device having a merge source drain region under contact areas and unmerged fins between contact areas, and a method of manufacturing same | Pranita Kerber, Alexander Reznicek | 2016-03-01 |
| 9275908 | Semiconductor device including gate channel having adjusted threshold voltage | Pranita Kerber, Alexander Reznicek | 2016-03-01 |
| 9230992 | Semiconductor device including gate channel having adjusted threshold voltage | Pranita Kerber, Alexander Reznicek | 2016-01-05 |