| 9530775 |
Methods of forming different FinFET devices having different fin heights and an integrated circuit product containing such devices |
Ruilong Xie, Kangguo Cheng, Ali Khakifirooz |
2016-12-27 |
$8,113,000 |
| 9515180 |
Vertical slit transistor with optimized AC performance |
Qing Liu, Chun-Chen Yeh, Ruilong Xie |
2016-12-06 |
$9,098,000 |
| 9502518 |
Multi-channel gate-all-around FET |
Qing Liu, Ruilong Xie, Chun-Chen Yeh |
2016-11-22 |
$5,410,000 |
| 9496354 |
Semiconductor devices with dummy gate structures partially on isolation regions |
Ruilong Xie, Ajey Poovannummoottil Jacob, Andreas Knorr, Christopher M. Prindle |
2016-11-15 |
$8,353,000 |
| 9496185 |
Dual channel finFET with relaxed pFET region |
Qing Liu, Ruilong Xie, Chun-Chen Yeh |
2016-11-15 |
$2,170,000 |
| 9478634 |
Methods of forming replacement gate structures on finFET devices and the resulting devices |
Ruilong Xie |
2016-10-25 |
$3,817,000 |
| 9472446 |
Methods of forming a FinFET semiconductor device with a unique gate configuration, and the resulting FinFET device |
Ruilong Xie, Kangguo Cheng, Ali Khakifirooz |
2016-10-18 |
$3,531,000 |
| 9466722 |
Large area contacts for small transistors |
Qing Liu, Ruilong Xie, Chun-Chen Yeh |
2016-10-11 |
$3,580,000 |
| 9460969 |
Macro to monitor n-p bump |
Qing Liu, Ruilong Xie, Chun-Chen Yeh |
2016-10-04 |
$3,433,000 |
| 9455330 |
Recessing RMG metal gate stack for forming self-aligned contact |
Kangguo Cheng, Ali Khakifirooz, Ruilong Xie |
2016-09-27 |
$4,099,000 |
| 9455331 |
Method and structure of forming controllable unmerged epitaxial material |
Kangguo Cheng, Ali Khakifirooz, Ruilong Xie, Tenko Yamashita |
2016-09-27 |
$4,099,000 |
| 9437711 |
Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices |
Xunyuan Zhang |
2016-09-06 |
$2,673,000 |
| 9431540 |
Method for making a semiconductor device with sidewall spacers for confining epitaxial growth |
Qing Liu, Ruilong Xie, Chun-Chen Yeh |
2016-08-30 |
$2,633,000 |
| 9431539 |
Dual-strained nanowire and FinFET devices with dielectric isolation |
Yi Qi, Catherine B. Labelle |
2016-08-30 |
$3,218,000 |
| 9425280 |
Semiconductor device with low-K spacers |
Ruilong Xie, Xunyuan Zhang |
2016-08-23 |
$3,675,000 |
| 9425319 |
Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same |
Ruilong Xie, Ali Khakifirooz, Kangguo Cheng |
2016-08-23 |
$3,675,000 |
| 9425292 |
Field effect transistor device spacers |
Sanjay C. Mehta, Tenko Yamashita |
2016-08-23 |
$3,302,000 |
| 9419137 |
Stress memorization film and oxide isolation in fins |
Abner Bello, Hugh Porter, Daniel T. Pham |
2016-08-16 |
$4,818,000 |
| 9412822 |
Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device |
Ruilong Xie, Kangguo Cheng, Ali Khakifirooz, Ajey Poovannummoottil Jacob, Witold P. Maszara |
2016-08-09 |
$2,792,000 |
| 9412740 |
Integrated circuit product with a gate height registration structure |
Ruilong Xie, Michael Wedlake, Ali Khakifirooz, Kangguo Cheng |
2016-08-09 |
$2,792,000 |
| 9406751 |
Method for making strained semiconductor device and related methods |
Qing Liu, Ruilong Xie, Chun-Chen Yeh |
2016-08-02 |
$3,849,000 |
| 9391200 |
FinFETs having strained channels, and methods of fabricating finFETs having strained channels |
Qing Liu, Ruilong Xie, Chun-Chen Yeh |
2016-07-12 |
$2,581,000 |
| 9390939 |
Methods of forming MIS contact structures for semiconductor devices and the resulting devices |
Ruilong Xie, Kangguo Cheng, Ali Khakifirooz |
2016-07-12 |
$2,207,000 |
| 9385201 |
Buried source-drain contact for integrated circuit transistor devices and method of making same |
Qing Liu, Ruilong Xie, Chun-Chen Yeh, William J. Taylor, Jr. |
2016-07-05 |
$2,131,000 |
| 9379209 |
Selectively forming a protective conductive cap on a metal gate electrode |
Jiajun Mao, Xusheng Wu, Min-hwa Chi |
2016-06-28 |
$2,208,000 |
