Issued Patents 2016
Showing 26–42 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9373542 | Integrated circuits and methods for fabricating integrated circuits with improved contact structures | Xunyuan Zhang, Hoon Kim | 2016-06-21 |
| 9349840 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Ruilong Xie, Ajey Poovannummoottil Jacob, Witold P. Maszara, Kangguo Cheng, Ali Khakifirooz | 2016-05-24 |
| 9337050 | Methods of forming fins for finFET semiconductor devices and the selective removal of such fins | Ruilong Xie, Kangguo Cheng | 2016-05-10 |
| 9318579 | Method for making a semiconductor device while avoiding nodules on a gate | Qing Liu, Ruilong Xie, Kejia Wang, Chun-Chen Yeh | 2016-04-19 |
| 9306001 | Uniformly doped leakage current stopper to counter under channel leakage currents in bulk FinFET devices | Qing Liu, Ruilong Xie, Chun-Chen Yeh | 2016-04-05 |
| 9299721 | Method for making semiconductor device with different fin sets | Qing Liu, Ruilong Xie, Chun-Chen Yeh, Kejia Wang, Daniel Chanemougame | 2016-03-29 |
| 9287130 | Method for single fin cuts using selective ion implants | Ajey Poovannummoottil Jacob, Ruilong Xie, Bruce B. Doris, Kangguo Cheng, Jason R. Cantone +7 more | 2016-03-15 |
| 9281382 | Method for making semiconductor device with isolation pillars between adjacent semiconductor fins | Qing Liu, Ruilong Xie, Chun-Chen Yeh | 2016-03-08 |
| 9269815 | FinFET semiconductor device with a recessed liner that defines a fin height of the FinFet device | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2016-02-23 |
| 9269611 | Integrated circuits having gate cap protection and methods of forming the same | Daniel T. Pham, Bala Haran, Charan V. Surisetty, Jin-Wook Lee, Shom Ponoth +1 more | 2016-02-23 |
| 9263338 | Semiconductor device including vertically spaced semiconductor channel structures and related methods | Qing Liu, Ruilong Xie | 2016-02-16 |
| 9263537 | Methods of forming a semiconductor device with a protected gate cap layer and the resulting device | Daniel T. Pham, Balasubramanian Pranatharthiharan, Pranita Kulkarni | 2016-02-16 |
| 9245979 | FinFET semiconductor devices with local isolation features and methods for fabricating the same | Ruilong Xie, Songkram Srivathanakul | 2016-01-26 |
| 9236258 | Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices | Ruilong Xie, Andy Wei, Qi Zhang, Ajey Poovannummoottil Jacob, Michael Hargrove | 2016-01-12 |
| 9236557 | Magnetic tunnel junction between metal layers of a semiconductor device | Xunyuan Zhang, Ruilong Xie, Hyun-Jin Cho | 2016-01-12 |
| 9236480 | Methods of forming finFET semiconductor devices using a replacement gate technique and the resulting devices | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2016-01-12 |
| 9231051 | Methods of forming spacers on FinFETs and other semiconductor devices | Ruilong Xie, William J. Taylor, Jr. | 2016-01-05 |