| 9508794 |
Mixed N/P-type fin semiconductor structure with epitaxial materials having increased surface area through multiple epitaxial heads |
Changyong Xiao, Xiang Hu, Wanxun He |
2016-11-29 |
$4,439,000 |
| 9496280 |
Semiconductor structure having logic region and analog region |
Hui Zang, Bingwu Liu |
2016-11-15 |
$8,353,000 |
| 9490174 |
Fabricating raised fins using ancillary fin structures |
Jianwei Peng, Min-hwa Chi |
2016-11-08 |
$4,991,000 |
| 9484417 |
Methods of forming doped transition regions of transistor structures |
Manfred Eller |
2016-11-01 |
$4,589,000 |
| 9455198 |
Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devices |
Hong Yu, Hongliang Shen, Zhenyu Hu, Lun Zhao, Richard J. Carter |
2016-09-27 |
$3,712,000 |
| 9431424 |
Method for creating metal gate resistor in FDSOL and resulting device |
— |
2016-08-30 |
$3,218,000 |
| 9419015 |
Method for integrating thin-film transistors on an isolation region in an integrated circuit and resulting device |
Changyong Xiao, Min-hwa Chi |
2016-08-16 |
$4,818,000 |
| 9418899 |
Method of multi-WF for multi-Vt and thin sidewall deposition by implantation for gate-last planar CMOS and FinFET technology |
Yan Ping SHEN, Min-hwa Chi, Weihua Tong, Haiting Wang |
2016-08-16 |
$4,818,000 |
| 9419126 |
Integrated circuits and methods for fabricating integrated circuits with active area protection |
Xiaodong Yang, Jin Ping Liu, Yanxiang Liu |
2016-08-16 |
$4,818,000 |
| 9419139 |
Nitride layer protection between PFET source/drain regions and dummy gate during source/drain etch |
Hongxiang Mo, Qi Zhang, Byoung-Gi Min, Jeasung Park |
2016-08-16 |
$4,818,000 |
| 9379104 |
Method to make gate-to-body contact to release plasma induced charging |
— |
2016-06-28 |
$2,208,000 |
| 9379209 |
Selectively forming a protective conductive cap on a metal gate electrode |
Xiuyu Cai, Jiajun Mao, Min-hwa Chi |
2016-06-28 |
$2,208,000 |
| 9343371 |
Fabricating fin structures with doped middle portions |
Jin Ping Liu |
2016-05-17 |
$1,734,000 |
| 9337306 |
Multi-phase source/drain/gate spacer-epi formation |
Jianwei Peng, Hong Yu, Zhao Lun |
2016-05-10 |
$1,020,000 |
| 9299608 |
T-shaped contacts for semiconductor device |
Changyong Xiao, Min-hwa Chi |
2016-03-29 |
$707,000 |
| 9275906 |
Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial heads |
Xiang Hu, Changyong Xiao, Wanxun He |
2016-03-01 |
$579,000 |
| 9263516 |
Product comprised of FinFET devices with single diffusion break isolation structures |
Changyong Xiao, Wanxun He, Hongliang Shen |
2016-02-16 |
$417,000 |
