Issued Patents 2016
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9508850 | Epitaxial block layer for a fin field effect transistor device | Zhenyu Hu, Andy Wei, Qi Zhang, Sruthi Muralidharan, Amy L. Child | 2016-11-29 |
| 9455198 | Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devices | Hong Yu, Hongliang Shen, Zhenyu Hu, Lun Zhao, Xusheng Wu | 2016-09-27 |
| 9455201 | Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits | Manoj Joshi, Manfred Eller, Rohit Pal, Srikanth B. Samavedam, Bongki Lee +1 more | 2016-09-27 |
| 9362180 | Integrated circuit having multiple threshold voltages | Bongki Lee, Jin Ping Liu, Manoj Joshi, Manfred Eller, Rohit Pal +1 more | 2016-06-07 |
| 9362176 | Uniform exposed raised structures for non-planar semiconductor devices | Hong Yu, Hongliang Shen, Zhao Lun, Zhenyu Hu | 2016-06-07 |
| 9324841 | Methods for preventing oxidation damage during FinFET fabrication | Hong Yu, Hyucksoo Yang, Huang Liu | 2016-04-26 |
| 9293586 | Epitaxial block layer for a fin field effect transistor device | Zhenyu Hu, Andy Wei, Qi Zhang, Sruthi Muralidharan, Amy L. Child | 2016-03-22 |
| 9236312 | Preventing EPI damage for cap nitride strip scheme in a Fin-shaped field effect transistor (FinFET) device | Hong Yu, Hyucksoo Yang | 2016-01-12 |