HY

Hyucksoo Yang

Globalfoundries: 3 patents #286 of 2,145Top 15%
📍 Meridian, ID: #16 of 89 inventorsTop 20%
🗺 Idaho: #111 of 911 inventorsTop 15%
Overall (2016): #70,713 of 481,213Top 15%
3
Patents 2016

Issued Patents 2016

Showing 1–3 of 3 patents

Patent #TitleCo-InventorsDate
9356147 FinFET spacer etch for eSiGe improvement Hong Yu, Puneet Khanna 2016-05-31
9324841 Methods for preventing oxidation damage during FinFET fabrication Hong Yu, Huang Liu, Richard J. Carter 2016-04-26
9236312 Preventing EPI damage for cap nitride strip scheme in a Fin-shaped field effect transistor (FinFET) device Hong Yu, Richard J. Carter 2016-01-12