BM

Byoung-Gi Min

Globalfoundries: 2 patents #439 of 2,145Top 25%
📍 Cohoes, NY: #11 of 34 inventorsTop 35%
🗺 New York: #2,389 of 11,723 inventorsTop 25%
Overall (2016): #155,290 of 481,213Top 35%
2
Patents 2016

Issued Patents 2016

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
9419101 Multi-layer spacer used in finFET Jianwei Peng, Hong Yu, Zhao Lun, Tao Han, Hsien-Ching Lo +2 more 2016-08-16
9419139 Nitride layer protection between PFET source/drain regions and dummy gate during source/drain etch Xusheng Wu, Hongxiang Mo, Qi Zhang, Jeasung Park 2016-08-16