| 9530701 |
Method of forming semiconductor fins on SOI substrate |
Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang |
2016-12-27 |
| 9490223 |
Structure to prevent deep trench moat charging and moat isolation fails |
Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang |
2016-11-08 |
| 9484269 |
Structure and method to control bottom corner threshold in an SOI device |
Jeffrey B. Johnson, Kevin McStay, Paul C. Parries, Chengwen Pei, Geng Wang +1 more |
2016-11-01 |
| 9478600 |
Method of forming substrate contact for semiconductor on insulator (SOI) substrate |
Geng Wang, Roger A. Booth, Jr., Kangguo Cheng, Chengwen Pei, Ravi M. Todi |
2016-10-25 |
| 9461042 |
Sublithographic width finFET employing solid phase epitaxy |
Kangguo Cheng, Juntao Li, Chengwen Pei, Ravi M. Todi, Geng Wang |
2016-10-04 |
| 9397152 |
Multilayer MIM capacitor |
Kangguo Cheng, Chengwen Pei, Ravi M. Todi, Geng Wang |
2016-07-19 |
| 9391204 |
Asymmetric FET |
Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang |
2016-07-12 |
| 9379177 |
Deep trench capacitor |
Kangguo Cheng, Chengwen Pei, Ravi M. Todi, Geng Wang |
2016-06-28 |
| 9343320 |
Pattern factor dependency alleviation for eDRAM and logic devices with disposable fill to ease deep trench integration with fins |
Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang |
2016-05-17 |
| 9293520 |
Method of forming substrate contact for semiconductor on insulator (SOI) substrate |
Geng Wang, Roger A. Booth, Jr., Kangguo Cheng, Chengwen Pei, Ravi M. Todi |
2016-03-22 |
| 9287272 |
Metal trench capacitor and improved isolation and methods of manufacture |
Roger A. Booth, Jr., Kangguo Cheng, Chengwen Pei, Ravi M. Todi, Geng Wang |
2016-03-15 |
| 9228994 |
Nanochannel electrode devices |
Kangguo Cheng, Juntao Li, Chengwen Pei, Geng Wang |
2016-01-05 |
