Issued Patents 2016
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9418846 | Selective dopant junction for a group III-V semiconductor device | Kevin K. Chan, Marinus Hopstaken, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung +3 more | 2016-08-16 |
| 9391171 | Fin field effect transistor including a strained epitaxial semiconductor shell | Kevin K. Chan, Young-Hee Kim, Masaharu Kobayashi, Jinghong Li | 2016-07-12 |
| 9349649 | Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs | Kevin K. Chan, Yue Ke, Annie Levesque, Ravikumar Ramachandran, Amanda L. Tessier +1 more | 2016-05-24 |
| 9349650 | Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs | Kevin K. Chan, Yue Ke, Annie Levesque, Ravikumar Ramachandran, Amanda L. Tessier +1 more | 2016-05-24 |
| 9318318 | 3D atomic layer gate or junction extender | Kevin K. Chan, Pouya Hashemi, Effendi Leobandung, Min Yang | 2016-04-19 |
| 9306038 | Shallow extension junction | Kevin K. Chan, Pouya Hashemi, Effendi Leobandung, Min Yang | 2016-04-05 |
| 9293557 | Low temperature spacer for advanced semiconductor devices | Kevin K. Chan, Alfred Grill, Deborah A. Neumayer, Norma E. Sosa, Min Yang | 2016-03-22 |
| 9287136 | FinFET field-effect transistors with atomic layer doping | Kevin K. Chan, Young-Hee Kim, Isaac Lauer, Ramachandran Muralidhar, Xinhui Wang +1 more | 2016-03-15 |
| 9275907 | 3D transistor channel mobility enhancement | Kevin K. Chan, Xinhui Wang, Yun-Yu Wang, Min Yang, Qi Zhang | 2016-03-01 |
| 9236314 | High-K/metal gate stack using capping layer methods, IC and related transistors | Michael P. Chudzik, Naim Moumen, Vijay Narayanan, Vamsi K. Paruchuri | 2016-01-12 |