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Nanowire field effect transistor (FET) and method for fabricating the same |
Szu-Lin Cheng, Isaac Lauer, Kuen-Ting Shiu, Jeng-Bang Yau |
2016-08-30 |
| 9385122 |
Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same |
Szu-Lin Cheng, Isaac Lauer, Jeng-Bang Yau |
2016-07-05 |
| 9337026 |
Graphene growth on a carbon-containing semiconductor layer |
Christos D. Dimitrakopoulos, Alfred Grill, Chun-Yung Sung |
2016-05-10 |
| 9337281 |
Planar semiconductor growth on III-V material |
Cheng-Wei Cheng, Devendra K. Sadana, Kuen-Ting Shiu, Yanning Sun |
2016-05-10 |
| 9240326 |
Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact |
Szu-Lin Cheng, Isaac Lauer, Jeng-Bang Yau |
2016-01-19 |
| 9236477 |
Graphene transistor with a sublithographic channel width |
Christos D. Dimitrakopoulos, Eric C. Harley, Judson R. Holt, Timothy J. McArdle, Matthew W. Stoker |
2016-01-12 |
| 9236250 |
Formation of a graphene layer on a large substrate |
Christos D. Dimitrakopoulos, Marcus O. Freitag, Alfred Grill, Timothy J. McArdle, Robert L. Wisnieff |
2016-01-12 |
