LG

Laurent Grenouillet

CEA: 9 patents #2 of 991Top 1%
SS Stmicroelectronics Sa: 5 patents #86 of 543Top 20%
Globalfoundries: 3 patents #286 of 2,145Top 15%
SS Stmicroelectronics (Crolles 2) Sas: 1 patents #34 of 98Top 35%
IBM: 1 patents #5,048 of 10,295Top 50%
📍 Grenoble, NY: #2 of 7 inventorsTop 30%
Overall (2016): #6,630 of 481,213Top 2%
10
Patents 2016

Issued Patents 2016

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDate
9502558 Local strain generation in an SOI substrate Shay Reboh, Cyrille Le Royer, Sylvain Maitrejean, Yves Morand 2016-11-22
9466664 Uniaxially-strained FD-SOI finFET Pierre Morin, Maud Vinet, Ajey Poovannummoottil Jacob 2016-10-11
9437474 Method for fabricating microelectronic devices with isolation trenches partially formed under active regions Yannick Le Tiec, Nicolas Loubet, Maud Vinet, Romain Wacquez 2016-09-06
9425051 Method for producing a silicon-germanium film with variable germanium content Maud Vinet, Yves Morand 2016-08-23
9373507 Defective P-N junction for backgated fully depleted silicon on insulator mosfet Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Yannick Le Tiec, Qing Liu +1 more 2016-06-21
9337350 Transistor with reduced parasitic capacitance and access resistance of the source and drain, and method of fabrication of the same Nicolas Posseme, Yannick Le Tiec, Maud Vinet 2016-05-10
9293474 Dual channel hybrid semiconductor-on-insulator semiconductor devices Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Qing Liu, Yannick Le Tiec +1 more 2016-03-22
9252208 Uniaxially-strained FD-SOI finFET Pierre Morin, Maud Vinet, Ajey Poovannummoottil Jacob 2016-02-02
9236478 Method for manufacturing a fin MOS transistor Yves Morand, Romain Wacquez, Yannick Le Tiec, Maud Vinet 2016-01-12
9231062 Method for treating the surface of a silicon substrate Yannick Le Tiec, Maud Vinet, Romain Wacquez 2016-01-05