| 9502543 |
Method of manufacturing for memory transistor with multiple charge storing layers and a high work function gate electrode |
Igor Polishchuk, Sagy Levy |
2016-11-22 |
| 9496144 |
Method of fabricating a charge-trapping gate stack using a CMOS process flow |
Hui-Mei Shih |
2016-11-15 |
| 9460974 |
Oxide formation in a plasma process |
Jeong Soo Byun |
2016-10-04 |
| 9449831 |
Oxide-nitride-oxide stack having multiple oxynitride layers |
Sagy Levy, Fredrick B. Jenne, Sam Geha |
2016-09-20 |
| 9431549 |
Nonvolatile charge trap memory device having a high dielectric constant blocking region |
Igor Polishchuk, Sagy Levy |
2016-08-30 |
| 9406574 |
Oxide formation in a plasma process |
Jeong Soo Byun |
2016-08-02 |
| 9356035 |
Embedded SONOS based memory cells |
Igor G. Kouznetsov, Venkatraman Prabhakar |
2016-05-31 |
| 9355725 |
Non-volatile memory and method of operating the same |
Bo Jin, Xiaojun Yu, Igor G. Kouznetsov, Venkatraman Prabhakar |
2016-05-31 |
| 9355849 |
Oxide-nitride-oxide stack having multiple oxynitride layers |
Sagy Levy, Fredrick B. Jenne, Sam Geha |
2016-05-31 |
| 9349877 |
Nitridation oxidation of tunneling layer for improved SONOS speed and retention |
Sagy Levy, Frederick B. Jenne |
2016-05-24 |
| 9349824 |
Oxide-nitride-oxide stack having multiple oxynitride layers |
Sagy Levy, Frederick B. Jenne, Sam Geha |
2016-05-24 |
| 9306025 |
Memory transistor with multiple charge storing layers and a high work function gate electrode |
Igor Polishchuk, Sagy Levy |
2016-04-05 |
| 9299568 |
SONOS ONO stack scaling |
Fredrick B. Jenne, Sagy Levy |
2016-03-29 |
