Issued Patents 2016
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9502543 | Method of manufacturing for memory transistor with multiple charge storing layers and a high work function gate electrode | Igor Polishchuk, Sagy Levy | 2016-11-22 |
| 9496144 | Method of fabricating a charge-trapping gate stack using a CMOS process flow | Hui-Mei Shih | 2016-11-15 |
| 9460974 | Oxide formation in a plasma process | Jeong Soo Byun | 2016-10-04 |
| 9449831 | Oxide-nitride-oxide stack having multiple oxynitride layers | Sagy Levy, Fredrick B. Jenne, Sam Geha | 2016-09-20 |
| 9431549 | Nonvolatile charge trap memory device having a high dielectric constant blocking region | Igor Polishchuk, Sagy Levy | 2016-08-30 |
| 9406574 | Oxide formation in a plasma process | Jeong Soo Byun | 2016-08-02 |
| 9356035 | Embedded SONOS based memory cells | Igor G. Kouznetsov, Venkatraman Prabhakar | 2016-05-31 |
| 9355725 | Non-volatile memory and method of operating the same | Bo Jin, Xiaojun Yu, Igor G. Kouznetsov, Venkatraman Prabhakar | 2016-05-31 |
| 9355849 | Oxide-nitride-oxide stack having multiple oxynitride layers | Sagy Levy, Fredrick B. Jenne, Sam Geha | 2016-05-31 |
| 9349877 | Nitridation oxidation of tunneling layer for improved SONOS speed and retention | Sagy Levy, Frederick B. Jenne | 2016-05-24 |
| 9349824 | Oxide-nitride-oxide stack having multiple oxynitride layers | Sagy Levy, Frederick B. Jenne, Sam Geha | 2016-05-24 |
| 9306025 | Memory transistor with multiple charge storing layers and a high work function gate electrode | Igor Polishchuk, Sagy Levy | 2016-04-05 |
| 9299568 | SONOS ONO stack scaling | Fredrick B. Jenne, Sagy Levy | 2016-03-29 |