| 9502543 |
Method of manufacturing for memory transistor with multiple charge storing layers and a high work function gate electrode |
Igor Polishchuk, Krishnaswamy Ramkumar |
2016-11-22 |
| 9484454 |
Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure |
Sharon Levin, Noel Berkovitch |
2016-11-01 |
| 9449831 |
Oxide-nitride-oxide stack having multiple oxynitride layers |
Krishnaswamy Ramkumar, Fredrick B. Jenne, Sam Geha |
2016-09-20 |
| 9431549 |
Nonvolatile charge trap memory device having a high dielectric constant blocking region |
Igor Polishchuk, Krishnaswamy Ramkumar |
2016-08-30 |
| 9355849 |
Oxide-nitride-oxide stack having multiple oxynitride layers |
Krishnaswamy Ramkumar, Fredrick B. Jenne, Sam Geha |
2016-05-31 |
| 9349877 |
Nitridation oxidation of tunneling layer for improved SONOS speed and retention |
Krishnaswamy Ramkumar, Frederick B. Jenne |
2016-05-24 |
| 9349824 |
Oxide-nitride-oxide stack having multiple oxynitride layers |
Krishnaswamy Ramkumar, Frederick B. Jenne, Sam Geha |
2016-05-24 |
| 9306025 |
Memory transistor with multiple charge storing layers and a high work function gate electrode |
Igor Polishchuk, Krishnaswamy Ramkumar |
2016-04-05 |
| 9299568 |
SONOS ONO stack scaling |
Fredrick B. Jenne, Krishnaswamy Ramkumar |
2016-03-29 |
